https://scholars.lib.ntu.edu.tw/handle/123456789/503260
標題: | High K nanophase zinc oxide on biomimetic silicon nanotip array as supercapacitors | 作者: | Han, H.-C. Chong, C.-W. Wang, S.-B. Heh, D. Tseng, C.-A. Huang, Y.-F. Chattopadhyay, S. Chen, K.-H. Lin, C.-F. JIUN-HAW LEE LI-CHYONG CHEN |
關鍵字: | equivalent planar capacitance; nanophase; silicon nanotip array; supercapacitors; Zinc oxide | 公開日期: | 2013 | 出版社: | American Chemical Society | 卷: | 13 | 期: | 4 | 起(迄)頁: | 1422 - 1428 | 來源出版物: | Nano Letters | 摘要: | A 3D trenched-structure metal-insulator-metal (MIM) nanocapacitor array with an ultrahigh equivalent planar capacitance (EPC) of ∼300 μF cm -2 is demonstrated. Zinc oxide (ZnO) and aluminum oxide (Al 2O3) bilayer dielectric is deposited on 1 μm high biomimetic silicon nanotip (SiNT) substrate using the atomic layer deposition method. The large EPC is achieved by utilizing the large surface area of the densely packed SiNT (∼5 × 1010 cm-2) coated conformally with an ultrahigh dielectric constant of ZnO. The EPC value is 30 times higher than those previously reported in metal-insulator-metal or metal-insulator-semiconductor nanocapacitors using similar porosity dimensions of the support materials. © 2013 American Chemical Society. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-84876054060&doi=10.1021%2fnl304303p&partnerID=40&md5=0d7d5b7ef741edaff3663426c9c99495 | ISSN: | 15306984 | DOI: | 10.1021/nl304303p |
顯示於: | 凝態科學研究中心 |
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