High K nanophase zinc oxide on biomimetic silicon nanotip array as supercapacitors
Journal
Nano Letters
Journal Volume
13
Journal Issue
4
Pages
1422 - 1428
Date Issued
2013
Author(s)
Han, H.-C.
Chong, C.-W.
Wang, S.-B.
Heh, D.
Tseng, C.-A.
Huang, Y.-F.
Chattopadhyay, S.
Chen, K.-H.
Lin, C.-F.
Abstract
A 3D trenched-structure metal-insulator-metal (MIM) nanocapacitor array with an ultrahigh equivalent planar capacitance (EPC) of ∼300 μF cm -2 is demonstrated. Zinc oxide (ZnO) and aluminum oxide (Al 2O3) bilayer dielectric is deposited on 1 μm high biomimetic silicon nanotip (SiNT) substrate using the atomic layer deposition method. The large EPC is achieved by utilizing the large surface area of the densely packed SiNT (∼5 × 1010 cm-2) coated conformally with an ultrahigh dielectric constant of ZnO. The EPC value is 30 times higher than those previously reported in metal-insulator-metal or metal-insulator-semiconductor nanocapacitors using similar porosity dimensions of the support materials. © 2013 American Chemical Society.
Subjects
equivalent planar capacitance; nanophase; silicon nanotip array; supercapacitors; Zinc oxide
Publisher
American Chemical Society
Type
journal article