https://scholars.lib.ntu.edu.tw/handle/123456789/503334
標題: | High-gain photoconductivity in semiconducting InN nanowires | 作者: | Chen, R.-S. Yang, T.-H. Chen, H.-Y. LI-CHYONG CHEN Chen, K.-H. YING-JAY YANG Su, C.-H. Lin, C.-R. |
公開日期: | 2009 | 出版社: | American Institute of Physics | 卷: | 95 | 期: | 16 | 起(迄)頁: | 162112-1-162112-3 | 來源出版物: | Applied Physics Letters | 摘要: | We report on the photoconductivity study of the individual infrared-absorbing indium nitride (InN) nanowires. Temperature-dependent dark conductivity measurement indicates the semiconducting transport behavior of these InN nanowires. An enhanced photosensitivity from 0.3 to 14 is observed by lowering the temperature from 300 to 10 K. A calculated ultrahigh photoconductive gain at around 8× 107 at room temperature is obtained from the low-bandgap nitride nanowire under 808 nm excitation. © 2009 American Institute of Physics. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/503334 https://www.scopus.com/inward/record.uri?eid=2-s2.0-70350431288&doi=10.1063%2f1.3242023&partnerID=40&md5=12c75f24279467b3860dfa92b514c62a |
ISSN: | 00036951 | DOI: | 10.1063/1.3242023 | SDG/關鍵字: | Band-gap nitrides; Dark conductivity; High-gain; Indium nitride; InN Nanowires; Photoconductive gains; Room temperature; Temperature dependent; Transport behavior; Electric wire; Nitrides; Photoconductivity; Nanowires |
顯示於: | 凝態科學研究中心 |
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