https://scholars.lib.ntu.edu.tw/handle/123456789/516582
標題: | Optimization of Negative-Capacitance Vertical-Tunnel FET(NCVT-FET) | 作者: | H.-H. Lin Y.-K. Lin C. Hu VITA PI-HO HU |
關鍵字: | Ferroelectric (FE); Heterojunction; Negative capacitance (NC); Tunnel FET (TFET) | 公開日期: | 2020 | 卷: | 67 | 期: | 6 | 起(迄)頁: | 2593-2599 | 來源出版物: | IEEE Transactions on Electron Devices | 摘要: | We investigate the GaAs0.51Sb0.49/In0.53Ga0.47As negative-capacitance vertical-tunnel FET (NCVT-FET) to maximize its vertical tunneling over the corner tunneling. Negative capacitance enhances vertical tunneling more significantly than corner tunneling due to the amplified vertical electric field. By TCAD optimization of the device, small {I}_{{\mathrm {OFF}}} (10 pA/ \mu \text{m} ) and large {I}_{\text{ON}} ( 405~\mu \text{A}/\mu \text{m} ) at {V}_{\text {DD}} = {0.5} V with 14 mV/dec sub- {V}_{\text {t}} swing over 4 dec of current were obtained. Even at {V}_{\text {DD}} ={0.1} V, the optimized NCVT-FET has 10 pA/ \mu \text{m}~{I}_{\text{OFF}} , 5.86~\mu \text{A}/\mu \text{m}~{I}_{\text{ON}} ( 144\times higher than the nominal TFET), and {I}_{\text{ON}}/{I}_{\text{OFF}} ratio of {6} \times {10}^{{5}}. © 1963-2012 IEEE. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/516582 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85085566946&doi=10.1109%2fTED.2020.2986793&partnerID=40&md5=117c5a3ec0908d20dbae0b7b043b5f95 |
ISSN: | 00189383 | DOI: | 10.1109/ted.2020.2986793 | SDG/關鍵字: | Electric fields; Field effect transistors; Negative capacitance; Tunnel FET; Vertical electric fields; Vertical tunneling; Capacitance |
顯示於: | 電機工程學系 |
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