https://scholars.lib.ntu.edu.tw/handle/123456789/516588
標題: | Evaluation of Monolayer and Bilayer 2-D Transition Metal Dichalcogenide Devices for SRAM Applications | 作者: | C.-H. Yu M.-L. Fan K.-C. Yu Pin Su C.-T. Chuang VITA PI-HO HU |
關鍵字: | 2-D materials; Bilayer; Monolayer; SRAM cell; Transition metal dichalcogenide (TMD) | 公開日期: | 2016 | 卷: | 63 | 期: | 2 | 起(迄)頁: | 625-630 | 來源出版物: | IEEE Transactions on Electron Devices | 摘要: | For the first time, we comprehensively evaluate 6T SRAM stability and performance using monolayer and bilayer transition metal dichalcogenide (TMD) devices based on the ITRS 2028 (5.9 nm) node. Our study indicates that, with excellent device electrostatics and superior stability, the monolayer TMD is favored for low-power SRAM applications, while the bilayer TMD, with higher carrier mobility, is more suitable for relaxed channel length and high-performance SRAM applications. © 2015 IEEE. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/516588 https://www.scopus.com/inward/record.uri?eid=2-s2.0-84958125898&doi=10.1109%2fTED.2015.2505064&partnerID=40&md5=efd41d4c1936c5f17e20eef9426cdaba |
ISSN: | 00189383 | DOI: | 10.1109/ted.2015.2505064 | SDG/關鍵字: | Electric current regulators; Monolayers; Static random access storage; 6T-SRAM; Bi-layer; Channel length; Low-power SRAM; SRAM applications; Transition metal dichalcogenides; Transition metals |
顯示於: | 電機工程學系 |
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