https://scholars.lib.ntu.edu.tw/handle/123456789/516602
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | M.-L. Fan | en_US |
dc.contributor.author | Y.-N. Chen | en_US |
dc.contributor.author | P. Su | en_US |
dc.contributor.author | C.-T. Chuang | en_US |
dc.contributor.author | VITA PI-HO HU | en_US |
dc.creator | M.-L. Fan;V. P.-H. Hu;Y.-N. Chen;P. Su;C.-T. Chuang | - |
dc.date.accessioned | 2020-10-07T01:23:17Z | - |
dc.date.available | 2020-10-07T01:23:17Z | - |
dc.date.issued | 2012 | - |
dc.identifier.issn | 15497747 | - |
dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/516602 | - |
dc.identifier.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-84873405974&doi=10.1109%2fTCSII.2012.2231016&partnerID=40&md5=f82f98b0b9afbdae73104a1cd48468f8 | - |
dc.description.abstract | This paper investigates the impact of intrinsic random variability on the robustness of sense amplifier (SA) for fin-shaped field-effect transistor (FinFET) subthreshold static random access memory (SRAM) applications. We employ a model-assisted statistical approach to consider both fin line edge roughness (fin LER) and work function variation, which are regarded as the major variation sources in an advanced FinFET device. Our results indicate that fin LER dominates the overall variability of subthreshold SA robustness and sensing margin. In addition, it is observed that the offset voltage (OS) of current latch SA calculated solely from threshold voltage (T) mismatch underestimates the actual variation and is shown to be optimistic. For large-signal single-ended inverter sensing, we find that sense '0' hinders the allowable sensing margin and needs to be carefully designed. Compared with bulk CMOS, the superior electrostatic integrity and variability of FinFET enhance the feasibility of differential sensing in subthreshold SRAM applications. © 2004-2012 IEEE. | - |
dc.relation.ispartof | IEEE Transactions on Circuits and Systems II: Express Briefs | - |
dc.subject | Fin-shaped field-effect transistor (FinFET); sense amplifier (SA); subthreshold circuit; variability | - |
dc.subject.other | Electric current regulators; Fins (heat exchange); Roughness measurement; Static random access storage; Threshold voltage; Electrostatic integrity; Fin-shaped field-effect transistor (FinFET); Sense amplifier; Static random access memory; Statistical approach; Sub-threshold circuits; variability; Variability analysis; FinFET | - |
dc.title | Variability Analysis of Sense Amplifier for FinFET Subthreshold SRAM Applications | en_US |
dc.type | journal article | en |
dc.identifier.doi | 10.1109/tcsii.2012.2231016 | - |
dc.identifier.scopus | 2-s2.0-84873405974 | - |
dc.relation.pages | 878-882 | - |
dc.relation.journalvolume | 59 | - |
dc.relation.journalissue | 12 | - |
item.openairetype | journal article | - |
item.fulltext | no fulltext | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.grantfulltext | none | - |
item.cerifentitytype | Publications | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.dept | Program in Semiconductor Device, Material, and Hetero-integration | - |
crisitem.author.orcid | 0000-0002-6216-214X | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | Graduate School of Advanced Technology | - |
顯示於: | 電機工程學系 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。