https://scholars.lib.ntu.edu.tw/handle/123456789/516610
標題: | Investigation of Electrostatic Integrity for Ultrathin-Body Germanium-On-Nothing MOSFET | 作者: | Y.-S. Wu P. Su VITA PI-HO HU |
關鍵字: | Electrostatic integrity; germanium; germanium-on-nothing (GeON); Poissons equation; silicon-on-nothing (SON); ultrathin body (UTB) | 公開日期: | 2011 | 卷: | 10 | 期: | 2 | 起(迄)頁: | 325-330 | 來源出版物: | IEEE Transactions on Nanotechnology | 摘要: | This paper examines the electrostatic integrity of ultrathin-body (UTB) germanium-on-nothing (GeON) MOSFET using theoretically calculated subthreshold swing from the analytical solution of Poissons equation. Our results indicate that UTB GeON MOSFETs with the ratio of channel length (Lg) to channel thickness (Tch) around 4 can show comparable subthreshold swing to that of the silicon-on-nothing counterparts. The impact of buried insulator (BI) thickness (TBI) and BI permittivity on the electrostatic integrity of the UTB germanium channel devices are also examined. © 2006 IEEE. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/516610 https://www.scopus.com/inward/record.uri?eid=2-s2.0-79952673737&doi=10.1109%2fTNANO.2010.2041010&partnerID=40&md5=cb4fea687a9b30bda447ac81bb45c9c8 |
ISSN: | 1536125X | DOI: | 10.1109/tnano.2010.2041010 | SDG/關鍵字: | Analytical solutions; Buried insulators; Channel device; Channel length; Channel thickness; Electrostatic integrity; MOS-FET; MOSFETs; Poissons equation; Silicon-on-nothing; silicon-on-nothing (SON); Subthreshold swing; Ultra-thin-body; ultrathin body (UTB); Electrostatic devices; Electrostatics; MOSFET devices; Germanium |
顯示於: | 電機工程學系 |
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