https://scholars.lib.ntu.edu.tw/handle/123456789/559059
標題: | Thermoelectric transport of the half-filled lowest Landau level in a p-type Ge/SiGe heterostructure | 作者: | Liu, X. Lu, T.-M. Harris, C.T. Lu, F.-L. Liu, C.-Y. JIUN-YUN LI CHEE-WEE LIU Du, Rui-Rui |
公開日期: | 2020 | 卷: | 101 | 期: | 7 | 來源出版物: | Physical Review B | 摘要: | We investigate the thermoelectric transport properties of the half-filled lowest Landau level v=1/2 in a gated two-dimensional hole system in a strained Ge/SiGe heterostructure. The electron-diffusion dominated regime is achieved below 600 mK, where the diffusion thermopower Sxxd at v=1/2 shows a linear temperature dependence. In contrast, the diffusion-dominated Nernst signal Sxyd of v=1/2 is found to approach zero, which is independent of the measurement configuration (sweeping magnetic field at a fixed hole density or sweeping the density by a gate at a fixed magnetic field). © 2020 American Physical Society. |
URI: | https://www.scopus.com/inward/record.url?eid=2-s2.0-85079826418&partnerID=40&md5=95f9a9beacd46ff71badee98ee2d4032 https://scholars.lib.ntu.edu.tw/handle/123456789/559059 |
ISSN: | 24699950 | DOI: | 10.1103/PhysRevB.101.075304 | SDG/關鍵字: | Magnetic fields; Temperature distribution; Electron diffusion; Hole densities; Linear temperature dependence; Measurement configuration; Sweeping magnetic fields; Thermoelectric transport; Thermoelectric transport properties; Two dimensional hole system; Diffusion |
顯示於: | 電機工程學系 |
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