https://scholars.lib.ntu.edu.tw/handle/123456789/559082
標題: | A high-gain continuous class-f power amplifier in 90-nm CMOS for 5G communication | 作者: | Huang, Z.-J. Huang, B.-W. Kao, K.-Y. KUN-YOU LIN |
關鍵字: | CMOS; Millimeter-wave; Power amplifier (PA) | 公開日期: | 2019 | 卷: | 2019-December | 起(迄)頁: | 177-179 | 來源出版物: | Asia-Pacific Microwave Conference Proceedings, APMC | 會議論文: | 2019 IEEE Asia-Pacific Microwave Conference, APMC 2019 | 摘要: | A continuous class-F power amplifier (PA) is proposed using 90-nm CMOS process. The efficiency of the two-stage PA is enhanced by the proposed continuous class-F output matching network, which controls the reactive movement of the fundamental and 2nd harmonic impedances to achieve impedance condition of continuous class F. Besides, the gate bias of driver stage is designed for the reverse AM-PM distortion to compensate the of AM-PM distortion of the power stage. The PA achieves a measured small-signal gain of 26 dB, saturation output power (Psat) of 15.5 dBm, peak power-added efficiency (PAE) of 32%, output I-dB compression power (OP1dB) of 13.7 dBm at 27 GHz, respectively. The digital-modulation measurement for 64-QAM signal with bandwidth of 250 MHz achieves average output power (Po, avg) 9.5 dBm when the EVM is-25 dB. © 2019 IEEE. |
URI: | https://www.scopus.com/inward/record.url?eid=2-s2.0-85082998111&partnerID=40&md5=002bce84bb4089777f6db2347b1ab6a3 https://scholars.lib.ntu.edu.tw/handle/123456789/559082 |
DOI: | 10.1109/APMC46564.2019.9038839 |
顯示於: | 電機工程學系 |
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