https://scholars.lib.ntu.edu.tw/handle/123456789/576189
Title: | Negative capacitance FETs with steep switching by ferroelectric Hf-based oxide | Authors: | MING-HAN LIAO CHEE-WEE LIU |
Keywords: | Ferroelectricity; FinFET; Hafnium; VLSI circuits; Hysteresis free; Negative capacitance; Negative capacitance effect; Physical thickness; Sub-threshold swing(ss); Capacitance | Issue Date: | 2017 | Source: | 2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017 | Abstract: | Ferroelectric HfZrOx (FE-HZO) negative capacitance (NC) FETs is experimentally demonstrated with physical thickness 1.5 nm after annealing 800°C for subthreshold swing (SS) < 60 mV/dec and hysteresis free. The relation between SS and FE-HZO thickness is also discussed. The NC-FinFET modeling is validated on standard 14nm FinFET. The feasible concept of coupling the polarization Hf-based oxide was applied, which were experimentally established with the validity of the negative capacitance effect. ? 2017 IEEE. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85023175409&doi=10.1109%2fVLSI-TSA.2017.7942466&partnerID=40&md5=8c476c78edb94d260bc1edde3afa8dd4 https://scholars.lib.ntu.edu.tw/handle/123456789/576189 |
DOI: | 10.1109/VLSI-TSA.2017.7942466 |
Appears in Collections: | 機械工程學系 |
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