https://scholars.lib.ntu.edu.tw/handle/123456789/576865
標題: | A stable and efficient pt/n-type ge schottky contact that uses low-cost carbon paste interlayers | 作者: | Lin P.-T Chang J.-W Chang S.-R Li Z.-K Chen W.-Z Huang J.-H Ji Y.-Z Hsueh W.-J Huang C.-Y. WEN-JENG HSUEH |
公開日期: | 2021 | 卷: | 11 | 期: | 3 | 來源出版物: | Crystals | 摘要: | Ge-based Schottky diodes find applications in high-speed devices. However, Fermi-level pinning is a major issue for the development of Ge-based diodes. This study fabricates a Pt/carbon paste (CP)/Ge Schottky diode using low-cost CP as an interlayer. The Schottky barrier height (ΦB) is 0.65 eV for Pt/CP/n-Ge, which is a higher value than the value of 0.57 eV for conventional Pt/n-Ge. This demonstrates that the CP interlayer has a significant effect. The relevant junction mechanisms are illustrated using feasible energy level band diagrams. This strategy results in greater stability and enables a device to operate for more than 500 h under ambient conditions. This method realizes a highly stable Schottky contact for n-type Ge, which is an essential element of Ge-based high-speed electronics. ? 2021 by the authors. Licensee MDPI, Basel, Switzerland. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85102924795&doi=10.3390%2fcryst11030259&partnerID=40&md5=ad22ebcd763234f6d9c7a61d673e138b https://scholars.lib.ntu.edu.tw/handle/123456789/576865 |
ISSN: | 20734352 | DOI: | 10.3390/cryst11030259 |
顯示於: | 工程科學及海洋工程學系 |
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