https://scholars.lib.ntu.edu.tw/handle/123456789/576897
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Peng C.-W | en_US |
dc.contributor.author | Liao W.-B | en_US |
dc.contributor.author | Chen T.-Y | en_US |
dc.contributor.author | CHI-FENG PAI | en_US |
dc.creator | Peng C.-W;Liao W.-B;Chen T.-Y;Pai C.-F. | - |
dc.date.accessioned | 2021-08-05T02:40:50Z | - |
dc.date.available | 2021-08-05T02:40:50Z | - |
dc.date.issued | 2021 | - |
dc.identifier.issn | 19448244 | - |
dc.identifier.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85104046624&doi=10.1021%2facsami.1c03530&partnerID=40&md5=022386dfa64001717ce6ba5d14d64454 | - |
dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/576897 | - |
dc.description.abstract | Spin-orbit torques (SOTs) from transition metal dichalcogenide systems (TMDs) in conjunction with ferromagnetic materials are recently found to be attractive in spintronics for their versatile features. However, most of the previously studied crystalline TMDs are prepared by mechanical exfoliation, which limits their potentials for industrial applications. Here, we show that amorphous WTe2 heterostructures deposited by magnetron sputtering possess a sizable damping-like SOT efficiency of ζDLWTe2 ? 0.20 and low damping constant of α = 0.009 ± 0.001. Only an extremely low critical switching current density of Jc? 7.05 × 109 A/m2 is required to achieve SOT-driven magnetization switching. The SOT efficiency is further proved to depend on the W and Te relative compositions in the co-sputtered W100-xTex samples, from which a sign change of ζDLWTe2 is observed. In addition, the electronic transport in amorphous WTe2 is found to be semiconducting and is governed by a hopping mechanism. With the above advantages and rich tunability, amorphous and semiconducting WTe2 serves as a unique SOT source for future spintronics applications. ? 2021 American Chemical Society. | - |
dc.relation.ispartof | ACS Applied Materials and Interfaces | - |
dc.subject | Damping; Efficiency; Ferromagnetic materials; Nanocrystalline materials; Spin fluctuations; Spin orbit coupling; Transition metals; Critical switching current; Electronic transport; Hopping mechanism; Hopping transport; Magnetization switching; Mechanical exfoliation; Spintronics application; Transition metal dichalcogenides; Semiconducting tellurium compounds | - |
dc.title | Efficient Spin-Orbit Torque Generation in Semiconducting WTe2with Hopping Transport | en_US |
dc.type | journal article | en |
dc.identifier.doi | 10.1021/acsami.1c03530 | - |
dc.identifier.pmid | 33769782 | - |
dc.identifier.scopus | 2-s2.0-85104046624 | - |
dc.relation.pages | 15950-15957 | - |
dc.relation.journalvolume | 13 | - |
dc.relation.journalissue | 13 | - |
item.cerifentitytype | Publications | - |
item.fulltext | no fulltext | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.openairetype | journal article | - |
item.grantfulltext | none | - |
crisitem.author.dept | Materials Science and Engineering | - |
crisitem.author.orcid | 0000-0001-6723-8302 | - |
crisitem.author.parentorg | College of Engineering | - |
顯示於: | 材料科學與工程學系 |
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