https://scholars.lib.ntu.edu.tw/handle/123456789/576930
Title: | Low-Temperature Physical Adsorption for the Nucleation of Sub-10 nm Al2O3Gate Stack on Top-Gated WS2Transistors | Authors: | Lin Y.-S Hoo J.-Y Chung T.-F Yang J.-R JER-REN YANG MIIN-JANG CHEN |
Keywords: | Adsorption; Alumina; Aluminum oxide; Atomic force microscopy; Atomic layer deposition; Crystallization; Gate dielectrics; Gates (transistor); High resolution transmission electron microscopy; Leakage currents; Nucleation; Sulfur compounds; Temperature; X ray photoelectron spectroscopy; Channel materials; Conductive atomic force microscopy; Low temperatures; Low-leakage current; Physical adsorption; Process-based; Subthreshold slope; Tungsten disulfide; Tungsten compounds | Issue Date: | 2020 | Journal Volume: | 2 | Journal Issue: | 5 | Start page/Pages: | 1289-1294 | Source: | ACS Applied Electronic Materials | Abstract: | Two-dimensional tungsten disulfide (WS2) is one of the potential channel materials in future nanoelectronics. In this paper, an atomic layer deposition (ALD) process based on low-temperature (low-T) physical adsorption and a short purge time was used for nucleation engineering to achieve a continuous Al2O3 gate oxide with a thickness of less 10 nm on WS2. No oxidation states were observed from WS2 as revealed by X-ray photoelectron spectroscopy (XPS), indicating that the nucleation of Al2O3 gate dielectrics proceeds via the physical adsorption of reactants or precursors. The sub-10 nm thickness and the low leakage current of the Al2O3 gate oxide were validated by transmission electron microscopy (TEM) and conductive atomic force microscopy (AFM) characterizations. This high-quality Al2O3 gate oxide leads to the formation of the top-gated WS2 transistor with a low subthreshold slope. Copyright ? 2020 American Chemical Society. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85105983410&doi=10.1021%2facsaelm.0c00089&partnerID=40&md5=c33cc73a292cea49b450ceb02fd8c022 https://scholars.lib.ntu.edu.tw/handle/123456789/576930 |
ISSN: | 26376113 | DOI: | 10.1021/acsaelm.0c00089 |
Appears in Collections: | 材料科學與工程學系 |
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