https://scholars.lib.ntu.edu.tw/handle/123456789/580645
標題: | Valley effects on the fractions in an ultrahigh mobility SiGe/Si/SiGe two-dimensional electron system | 作者: | Dolgopolov V.T Melnikov M.Y Shashkin A.A Huang S.-H Liu C.W Kravchenko S.V. CHEE-WEE LIU |
關鍵字: | Electrons; Landforms; Quantum theory; Silicon; Composite fermion; Filling factor; Lower density; Quantum levels; Quantum numbers; Tilt angle; Two-dimensional electron system; Quantum Hall effect | 公開日期: | 2021 | 卷: | 103 | 期: | 16 | 來源出版物: | Physical Review B | 摘要: | We observe minima of the longitudinal resistance corresponding to the quantum Hall effect of composite fermions at quantum numbers p=1, 2, 3, 4, and 6 in an ultraclean strongly interacting bivalley SiGe/Si/SiGe two-dimensional electron system. The minima at p=3 disappear below a certain electron density, although the surrounding minima at p=2 and p=4 survive at significantly lower densities. Furthermore, the onset for the resistance minimum at a filling factor ν=3/5 is found to be independent of the tilt angle of the magnetic field. These surprising results indicate the intersection or merging of the quantum levels of composite fermions with different valley indices, which reveals the valley effect on fractions. ? 2021 American Physical Society. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85104483328&doi=10.1103%2fPhysRevB.103.L161302&partnerID=40&md5=5e273fe6555d17561058ccafd75e89a1 https://scholars.lib.ntu.edu.tw/handle/123456789/580645 |
ISSN: | 24699950 | DOI: | 10.1103/PhysRevB.103.L161302 |
顯示於: | 電機工程學系 |
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