https://scholars.lib.ntu.edu.tw/handle/123456789/580694
標題: | All-Two-Dimensional-Material Hot Electron Transistor | 作者: | CHIH-I WU | 關鍵字: | Boron nitride; Capacitance measurement; Electron scattering; Electron tunneling; Electrons; Graphene transistors; Hot electrons; Integrated circuits; Interfaces (materials); Scattering; Selenium compounds; Thermionic emission; Transistors; Van der Waals forces; Atom optics; Hot electron transistors; Two-dimensional displays; Two-dimensional materials; Van der waals; Graphene | 公開日期: | 2018 | 卷: | 39 | 期: | 4 | 起(迄)頁: | 634-637 | 來源出版物: | IEEE Electron Device Letters | 摘要: | In this letter, we report the first experimental realization of purely two-dimensional-material-based hot electron transistor (2D-HET) by the van der Waals stacking. We used ultra-thin graphene as the base, and WSe2 or ${h}$ -BN as the emitter-base or base-collector barriers. We quantitatively determined that the transport mechanism through the 2D barrier changes from the Fowler-Nordheim tunneling to the thermionic emission with the increase of temperature. In our 2D-HET, the dangling-bond-free 2D materials provide atomically sharp interfaces to suppress the hot electron scattering, which along with the optimization of the barriers, gives a relatively large collection efficiency of 99.95% and a relatively high current density of 233 A/cm2 in the family of graphene-base HETs. ? 1980-2012 IEEE. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85042848312&doi=10.1109%2fLED.2018.2810272&partnerID=40&md5=f2fa9e6b21e0aefb7737e3b490941d9e https://scholars.lib.ntu.edu.tw/handle/123456789/580694 |
ISSN: | 07413106 | DOI: | 10.1109/LED.2018.2810272 |
顯示於: | 電機工程學系 |
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