https://scholars.lib.ntu.edu.tw/handle/123456789/580698
標題: | Direct large-area growth of graphene on silicon for potential ultra-low-friction applications and silicon-based technologies | 作者: | Tseng W.-S Tseng W.-S Chen Y.-C Hsu C.-C Lu C.-H Wu C.-I Yeh N.-C. CHIH-I WU |
關鍵字: | Friction; Graphene; Light transmission; Lithium-ion batteries; Photoelectron spectroscopy; Plasma CVD; Plasma enhanced chemical vapor deposition; Scanning electron microscopy; Silicon; Silicon oxides; Frictional coefficients; Multilayer graphene; Plasma enhanced chemical vapor depositions (PE CVD); Residual gas analyzers; Silicon substrates; Silicon Technologies; Silicon-based technology; Synthesis mechanism; Substrates | 公開日期: | 2020 | 卷: | 31 | 期: | 33 | 來源出版物: | Nanotechnology | 摘要: | Deposition of layers of graphene on silicon has the potential for a wide range of optoelectronic and mechanical applications. However, direct growth of graphene on silicon has been difficult due to the inert, oxidized silicon surfaces. Transferring graphene from metallic growth substrates to silicon is not a good solution either, because most transfer methods involve multiple steps that often lead to polymer residues or degradation of sample quality. Here we report a single-step method for large-area direct growth of continuous horizontal graphene sheets and vertical graphene nano-walls on silicon substrates by plasma-enhanced chemical vapor deposition (PECVD) without active heating. Comprehensive studies utilizing Raman spectroscopy, x-ray/ultraviolet photoelectron spectroscopy (XPS/UPS), atomic force microscopy (AFM), scanning electron microscopy (SEM) and optical transmission are carried out to characterize the quality and properties of these samples. Data gathered by the residual gas analyzer (RGA) during the growth process further provide information about the synthesis mechanism. Additionally, ultra-low friction (with a frictional coefficient ?0.015) on multilayer graphene-covered silicon surface is achieved, which is approaching the superlubricity limit (for frictional coefficients <0.01). Our growth method therefore opens up a new pathway towards scalable and direct integration of graphene into silicon technology for potential applications ranging from structural superlubricity to nanoelectronics, optoelectronics, and even the next-generation lithium-ion batteries. ? 2020 IOP Publishing Ltd. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85087429910&doi=10.1088%2f1361-6528%2fab9045&partnerID=40&md5=e3da8a892fe2a9313a6261497de5cd46 https://scholars.lib.ntu.edu.tw/handle/123456789/580698 |
ISSN: | 09574484 | DOI: | 10.1088/1361-6528/ab9045 | SDG/關鍵字: | Friction; Graphene; Light transmission; Lithium-ion batteries; Photoelectron spectroscopy; Plasma CVD; Plasma enhanced chemical vapor deposition; Scanning electron microscopy; Silicon; Silicon oxides; Frictional coefficients; Multilayer graphene; Plasma enhanced chemical vapor depositions (PE CVD); Residual gas analyzers; Silicon substrates; Silicon Technologies; Silicon-based technology; Synthesis mechanism; Substrates |
顯示於: | 電機工程學系 |
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