https://scholars.lib.ntu.edu.tw/handle/123456789/598329
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Lin P.-T | en_US |
dc.contributor.author | Huang W.-C | en_US |
dc.contributor.author | Lou Y.-Q | en_US |
dc.contributor.author | Yan C.-Y | en_US |
dc.contributor.author | Lin Y.-S | en_US |
dc.contributor.author | Chang C.-L | en_US |
dc.contributor.author | Chang P.-C | en_US |
dc.contributor.author | Gong J.-R | en_US |
dc.contributor.author | Hsueh W.-J | en_US |
dc.contributor.author | WEN-JENG HSUEH | en_US |
dc.creator | Lin P.-T;Huang W.-C;Lou Y.-Q;Yan C.-Y;Lin Y.-S;Chang C.-L;Chang P.-C;Gong J.-R;Hsueh W.-J;Huang C.-Y. | - |
dc.date.accessioned | 2022-03-22T08:27:21Z | - |
dc.date.available | 2022-03-22T08:27:21Z | - |
dc.date.issued | 2021 | - |
dc.identifier.issn | 00223727 | - |
dc.identifier.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85109107480&doi=10.1088%2f1361-6463%2fac03e8&partnerID=40&md5=d394490973aa361605113399410afd53 | - |
dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/598329 | - |
dc.description.abstract | The electrical performance of thin-film transistors that use an amorphous oxide semiconductor (AOS) is significantly improved by incorporating metal cations as carrier suppressors. However, the effect of these elements on the performance of AOS-based photodetectors (PDs) is still unknown. This study uses a precursor containing lithium (Li) element and a sol-gel process to produce a Li-doped amorphous ZnSnO (a-ZTO) thin-film for UV PD applications. The results of x-ray photoelectron spectroscopy analysis show that the number of oxygen vacancies (V o) in a-ZTO thin-films decreases significantly from ?32.1% to ?14.4% after Li-doping (3 at%). The dark current decreases and the photocurrent increases in the ZTO-based PD so an ultra-high photo-to-dark current ratio (PDCR) of 1185 is achieved. The significant increase in PDCR means that solution-processed a-ZTO are eminently suited to use in UV PDs that use In-free AOSs. ? 2021 IOP Publishing Ltd. | - |
dc.relation.ispartof | Journal of Physics D: Applied Physics | - |
dc.subject | Li-doping | - |
dc.subject | oxygen vacancy | - |
dc.subject | sol-gel | - |
dc.subject | ZnSnO photodetector | - |
dc.subject | Dark currents | - |
dc.subject | Indium alloys | - |
dc.subject | Indium metallography | - |
dc.subject | Lithium metallography | - |
dc.subject | Oxide semiconductors | - |
dc.subject | Photocurrents | - |
dc.subject | Photodetectors | - |
dc.subject | Photons | - |
dc.subject | Semiconducting zinc compounds | - |
dc.subject | Semiconductor doping | - |
dc.subject | Sol-gel process | - |
dc.subject | Thin film transistors | - |
dc.subject | Thin films | - |
dc.subject | X ray photoelectron spectroscopy | - |
dc.subject | Amorphous oxide semiconductors | - |
dc.subject | Dark current ratio | - |
dc.subject | Electrical performance | - |
dc.subject | Metal cation | - |
dc.subject | Metal-semiconductor-metal uv photodetectors | - |
dc.subject | Photodetectors (PDs) | - |
dc.subject | Solution-processed | - |
dc.subject | Ultra-high | - |
dc.subject | Semiconducting tin compounds | - |
dc.title | Solution-processed Li-doped ZnSnO metal-semiconductor-metal UV photodetectors | en_US |
dc.type | journal article | en |
dc.identifier.doi | 10.1088/1361-6463/ac03e8 | - |
dc.identifier.scopus | 2-s2.0-85109107480 | - |
dc.relation.journalvolume | 54 | - |
dc.relation.journalissue | 34 | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.openairetype | journal article | - |
item.grantfulltext | none | - |
item.cerifentitytype | Publications | - |
item.fulltext | no fulltext | - |
crisitem.author.dept | Engineering Science and Ocean Engineering | - |
crisitem.author.parentorg | College of Engineering | - |
顯示於: | 工程科學及海洋工程學系 |
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