|Title:||Solution-processed Li-doped ZnSnO metal-semiconductor-metal UV photodetectors||Authors:||Lin P.-T
|Keywords:||Li-doping;oxygen vacancy;sol-gel;ZnSnO photodetector;Dark currents;Indium alloys;Indium metallography;Lithium metallography;Oxide semiconductors;Photocurrents;Photodetectors;Photons;Semiconducting zinc compounds;Semiconductor doping;Sol-gel process;Thin film transistors;Thin films;X ray photoelectron spectroscopy;Amorphous oxide semiconductors;Dark current ratio;Electrical performance;Metal cation;Metal-semiconductor-metal uv photodetectors;Photodetectors (PDs);Solution-processed;Ultra-high;Semiconducting tin compounds||Issue Date:||2021||Journal Volume:||54||Journal Issue:||34||Source:||Journal of Physics D: Applied Physics||Abstract:||
The electrical performance of thin-film transistors that use an amorphous oxide semiconductor (AOS) is significantly improved by incorporating metal cations as carrier suppressors. However, the effect of these elements on the performance of AOS-based photodetectors (PDs) is still unknown. This study uses a precursor containing lithium (Li) element and a sol-gel process to produce a Li-doped amorphous ZnSnO (a-ZTO) thin-film for UV PD applications. The results of x-ray photoelectron spectroscopy analysis show that the number of oxygen vacancies (V o) in a-ZTO thin-films decreases significantly from ?32.1% to ?14.4% after Li-doping (3 at%). The dark current decreases and the photocurrent increases in the ZTO-based PD so an ultra-high photo-to-dark current ratio (PDCR) of 1185 is achieved. The significant increase in PDCR means that solution-processed a-ZTO are eminently suited to use in UV PDs that use In-free AOSs. ? 2021 IOP Publishing Ltd.
|Appears in Collections:||工程科學及海洋工程學系|
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