https://scholars.lib.ntu.edu.tw/handle/123456789/607224
標題: | Temperature Dependence of Charge Distributions and Carrier Mobility in an Undoped Si/SiGe Heterostructure | 作者: | Hsu N.-W Hou W.-C Chen Y.-Y Wu Y.-J Kao H.-S Harris C.T Lu T.-M Li J.-Y. JIUN-YUN LI |
關鍵字: | C-V characteristics;surface tunneling;undoped Si/SiGe heterostructure;Carrier concentration;Carrier mobility;Selenium compounds;Semiconductor quantum wells;Silicon;Silicon compounds;Temperature distribution;Two dimensional electron gas;2D electron gas;Capacitance-voltage characteristics;Carrier transport properties;Charge carrier density;Quantum-wells;Si/SiGe heterostructures;Surface tunneling;Temperature dependence;Tunneling;Undoped si/sige heterostructure.;Capacitance | 公開日期: | 2022 | 卷: | 69 | 期: | 2 | 起(迄)頁: | 482-486 | 來源出版物: | IEEE Transactions on Electron Devices | 摘要: | Capacitance-voltage ( {C} - {V} ) characteristics and carrier transport properties of 2-D electron gases (2DEGs) in an undoped Si/SiGe heterostructure at {T}= {4} - {35} K are presented. Two capacitance plateaus due to density saturation of the 2DEG in the buried Si quantum well (QW) are observed and explained by a model of surface tunneling. The peak mobility at 4 K is 4.1 \times 10^{{5}} cm2/ \text{V}\cdot \text{s} and enhanced by a factor of 1.97 at an even lower carrier density compared to the saturated carrier density, which is attributed to the effect of remote carrier screening. At {T}\,\,=35 K, the mobility enhancement with a factor of 1.35 is still observed, which suggests the surface tunneling is still dominant. ? 1963-2012 IEEE. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85122871151&doi=10.1109%2fTED.2021.3138363&partnerID=40&md5=b6e4c716b15357e698174786c0021b92 https://scholars.lib.ntu.edu.tw/handle/123456789/607224 |
ISSN: | 00189383 | DOI: | 10.1109/TED.2021.3138363 |
顯示於: | 電機工程學系 |
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