https://scholars.lib.ntu.edu.tw/handle/123456789/607224| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Hsu N.-W | en_US |
| dc.contributor.author | Hou W.-C | en_US |
| dc.contributor.author | Chen Y.-Y | en_US |
| dc.contributor.author | Wu Y.-J | en_US |
| dc.contributor.author | Kao H.-S | en_US |
| dc.contributor.author | Harris C.T | en_US |
| dc.contributor.author | Lu T.-M | en_US |
| dc.contributor.author | Li J.-Y. | en_US |
| dc.contributor.author | JIUN-YUN LI | zz |
| dc.creator | Hsu N.-W;Hou W.-C;Chen Y.-Y;Wu Y.-J;Kao H.-S;Harris C.T;Lu T.-M;Li J.-Y. | - |
| dc.date.accessioned | 2022-04-25T06:42:49Z | - |
| dc.date.available | 2022-04-25T06:42:49Z | - |
| dc.date.issued | 2022 | - |
| dc.identifier.issn | 00189383 | - |
| dc.identifier.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85122871151&doi=10.1109%2fTED.2021.3138363&partnerID=40&md5=b6e4c716b15357e698174786c0021b92 | - |
| dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/607224 | - |
| dc.description.abstract | Capacitance-voltage ( {C} - {V} ) characteristics and carrier transport properties of 2-D electron gases (2DEGs) in an undoped Si/SiGe heterostructure at {T}= {4} - {35} K are presented. Two capacitance plateaus due to density saturation of the 2DEG in the buried Si quantum well (QW) are observed and explained by a model of surface tunneling. The peak mobility at 4 K is 4.1 \times 10^{{5}} cm2/ \text{V}\cdot \text{s} and enhanced by a factor of 1.97 at an even lower carrier density compared to the saturated carrier density, which is attributed to the effect of remote carrier screening. At {T}\,\,=35 K, the mobility enhancement with a factor of 1.35 is still observed, which suggests the surface tunneling is still dominant. ? 1963-2012 IEEE. | - |
| dc.relation.ispartof | IEEE Transactions on Electron Devices | - |
| dc.subject | C-V characteristics | - |
| dc.subject | surface tunneling | - |
| dc.subject | undoped Si/SiGe heterostructure | - |
| dc.subject | Carrier concentration | - |
| dc.subject | Carrier mobility | - |
| dc.subject | Selenium compounds | - |
| dc.subject | Semiconductor quantum wells | - |
| dc.subject | Silicon | - |
| dc.subject | Silicon compounds | - |
| dc.subject | Temperature distribution | - |
| dc.subject | Two dimensional electron gas | - |
| dc.subject | 2D electron gas | - |
| dc.subject | Capacitance-voltage characteristics | - |
| dc.subject | Carrier transport properties | - |
| dc.subject | Charge carrier density | - |
| dc.subject | Quantum-wells | - |
| dc.subject | Si/SiGe heterostructures | - |
| dc.subject | Surface tunneling | - |
| dc.subject | Temperature dependence | - |
| dc.subject | Tunneling | - |
| dc.subject | Undoped si/sige heterostructure. | - |
| dc.subject | Capacitance | - |
| dc.title | Temperature Dependence of Charge Distributions and Carrier Mobility in an Undoped Si/SiGe Heterostructure | en_US |
| dc.type | journal article | - |
| dc.identifier.doi | 10.1109/TED.2021.3138363 | - |
| dc.identifier.scopus | 2-s2.0-85122871151 | - |
| dc.relation.pages | 482-486 | - |
| dc.relation.journalvolume | 69 | - |
| dc.relation.journalissue | 2 | - |
| item.openairetype | journal article | - |
| item.fulltext | no fulltext | - |
| item.grantfulltext | none | - |
| item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
| item.cerifentitytype | Publications | - |
| crisitem.author.dept | Electrical Engineering | - |
| crisitem.author.dept | Electronics Engineering | - |
| crisitem.author.orcid | 0000-0003-4905-9954 | - |
| crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
| crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
| Appears in Collections: | 電機工程學系 | |
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