https://scholars.lib.ntu.edu.tw/handle/123456789/607229
Title: | High-performance GeSn Electronic Devices and spin-orbit coupling in GeSn/Ge heterostructures | Authors: | Liu C.-Y Chuang Y Tai C.-T Kao H.-S Tien K.-Y Li J.-Y. JIUN-YUN LI |
Keywords: | Component;Formatting;Insert;Style;Styling;Photonic devices;Semiconductor alloys;Si-Ge alloys;Tin alloys;Electronic spins;Electronics devices;Performance;Photonics devices;Spin-orbit couplings;MOSFET devices | Issue Date: | 2021 | Journal Volume: | 2021-July | Source: | LEOS Summer Topical Meeting | Abstract: | GeSn is a promising material for high-performance electronic and photonic devices. In this work, we present our recent achievements on high electron mobility in GeSn n-MOSFETs, an extremely low contact resistivity in metal/n-GeSn junctions, and a high tunneling current density in GeSn Esaki diodes with large peak-to-valley current ratios. Last, we present the first two-dimensional hole gas in the undoped GeSn/Ge heterostructures with strong spin-orbit coupling (SOC) effects, which is tunable by top gating. ? 2021 IEEE. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85124417914&doi=10.1109%2fSUM48717.2021.9505847&partnerID=40&md5=ac171e2685879e9a9d78d6d9ea422fa9 https://scholars.lib.ntu.edu.tw/handle/123456789/607229 |
ISSN: | 10994742 | DOI: | 10.1109/SUM48717.2021.9505847 |
Appears in Collections: | 電機工程學系 |
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