https://scholars.lib.ntu.edu.tw/handle/123456789/614666
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chiu S.-P.; Yeh S.-S.; Chiou C.-J.; Chou Y.-C.; Lin J.-J.; Tsuei C.-C. | en_US |
dc.contributor.author | YI-CHIA CHOU | en_US |
dc.creator | Chiu S.-P.; Yeh S.-S.; Chiou C.-J.; Chou Y.-C.; Lin J.-J.; Tsuei C.-C. | - |
dc.date.accessioned | 2022-06-30T02:06:13Z | - |
dc.date.available | 2022-06-30T02:06:13Z | - |
dc.date.issued | 2017 | - |
dc.identifier.issn | 19360851 | - |
dc.identifier.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85018485523&doi=10.1021%2facsnano.6b06553&partnerID=40&md5=ab6ef0a9abb5cda9530e1fe7584eac7d | - |
dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/614666 | - |
dc.description.abstract | High-precision resistance noise measurements indicate that the epitaxial CoSi2/Si heterostructures at 150 and 2 K (slightly above its superconducting transition temperature Tc of 1.54 K) exhibit an unusually low 1/f noise level in the frequency range of 0.008-0.2 Hz. This corresponds to an upper limit of Hooge constant γ ≤ 3 × 10-6, about 100 times lower than that of single-crystalline aluminum films on SiO2 capped Si substrates. Supported by high-resolution cross-sectional transmission electron microscopy studies, our analysis reveals that the 1/f noise is dominated by excess interfacial Si atoms and their dimer reconstruction induced fluctuators. Unbonded orbitals (i.e., dangling bonds) on excess Si atoms are intrinsically rare at the epitaxial CoSi2/Si(100) interface, giving limited trapping-detrapping centers for localized charges. With its excellent normal-state properties, CoSi2 has been used in silicon-based integrated circuits for decades. The intrinsically low noise properties discovered in this work could be utilized for developing quiet qubits and scalable superconducting circuits for future quantum computing. © 2016 American Chemical Society. | - |
dc.language | en-US | - |
dc.publisher | American Chemical Society | - |
dc.relation.ispartof | ACS Nano | - |
dc.subject | Dangling bonds; Heterojunctions; High resolution transmission electron microscopy; Quantum computers; Quantum optics; Silicides; Silicon; Silicon oxides; Transmission electron microscopy; Cobalt disilicide; Cross sectional transmission electron microscopy; Fluctuators; Interfacial dynamics; Resistance noise; Silicon-based integrated circuits; Single-crystalline; Superconducting circuit; Superconducting transition temperature | - |
dc.title | Ultralow 1/f Noise in a Heterostructure of Superconducting Epitaxial Cobalt Disilicide Thin Film on Silicon | en_US |
dc.type | journal article | en |
dc.identifier.doi | 10.1021/acsnano.6b06553 | - |
dc.identifier.pmid | 28027434 | - |
dc.identifier.scopus | 2-s2.0-85018485523 | - |
dc.relation.pages | 516-525 | - |
dc.relation.journalvolume | 11 | - |
dc.relation.journalissue | 1 | - |
item.fulltext | no fulltext | - |
item.cerifentitytype | Publications | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.grantfulltext | none | - |
item.openairetype | journal article | - |
crisitem.author.dept | Materials Science and Engineering | - |
crisitem.author.parentorg | College of Engineering | - |
顯示於: | 材料科學與工程學系 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。