https://scholars.lib.ntu.edu.tw/handle/123456789/625367
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | HSUEN-LI CHEN | en_US |
dc.contributor.author | Cheng H.-C | en_US |
dc.contributor.author | Ko F.-H | en_US |
dc.contributor.author | Chu T.-C | en_US |
dc.contributor.author | Huang T.-Y. | en_US |
dc.creator | Chen H.-L;Cheng H.-C;Ko F.-H;Chu T.-C;Huang T.-Y. | - |
dc.date.accessioned | 2022-11-16T08:53:03Z | - |
dc.date.available | 2022-11-16T08:53:03Z | - |
dc.date.issued | 2002 | - |
dc.identifier.issn | 00214922 | - |
dc.identifier.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-0036614577&doi=10.1143%2fjjap.41.4046&partnerID=40&md5=2d6ce1abaabb5f6880483db75ded866e | - |
dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/625367 | - |
dc.description.abstract | In this paper, we demonstrate a new bottom antireflective coating (BARC) layer for both KrF and ArF lithography. The antireflective layers are composed of a novel low-dielectric constant polymer material (SiLK) and its etching hard-mask layer. By adding an optimized hard-mask layer, the reflectance of less than 1% at the resist/silicon substrate interface can be achieved. SiLK also has great potential to be used as BARC layers on various highly-reflectance substrates for metal-interconnect applications with large thickness-controlled tolerance. By using this novel structure, it is easy to reduce reflectance without adding an extra BARC layer for patterning low-dielectric materials. In this paper, suitable etching characteristics and thermal stability of SiLK-based BARC layers are also described. | - |
dc.relation.ispartof | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | - |
dc.subject | ArF lithography; Bottom antireflective coatings; KrF lithography; Low-dielectric constant materials; SiLK | - |
dc.subject.other | Antireflection coatings; Etching; Fluorine compounds; Interfaces (materials); Light reflection; Masks; Permittivity; Polymers; Substrates; Thermodynamic stability; Metal interconnects; Photolithography | - |
dc.title | Low dielectric constant polymer materials as bottom antireflective coating layers for both KrF and ArF lithography | en_US |
dc.type | journal article | en |
dc.identifier.doi | 10.1143/jjap.41.4046 | - |
dc.identifier.scopus | 2-s2.0-0036614577 | - |
dc.relation.pages | 4046-4050 | - |
dc.relation.journalvolume | 41 | - |
dc.relation.journalissue | 6 B | - |
item.cerifentitytype | Publications | - |
item.openairetype | journal article | - |
item.fulltext | no fulltext | - |
item.grantfulltext | none | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
crisitem.author.dept | Materials Science and Engineering | - |
crisitem.author.orcid | 0000-0002-7569-572X | - |
crisitem.author.parentorg | College of Engineering | - |
顯示於: | 材料科學與工程學系 |
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