https://scholars.lib.ntu.edu.tw/handle/123456789/62596
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor | 陳立仁 | en |
dc.contributor | 臺灣大學:化學工程學研究所 | zh_TW |
dc.contributor.author | 梁孟堯 | zh |
dc.contributor.author | Liang, Meng-Yao | en |
dc.creator | 梁孟堯 | zh |
dc.creator | Liang, Meng-Yao | en |
dc.date | 2006 | en |
dc.date.accessioned | 2007-11-26T04:05:31Z | - |
dc.date.accessioned | 2018-06-28T17:08:04Z | - |
dc.date.available | 2007-11-26T04:05:31Z | - |
dc.date.available | 2018-06-28T17:08:04Z | - |
dc.date.issued | 2006 | - |
dc.identifier | zh-TW | en |
dc.identifier.uri | http://ntur.lib.ntu.edu.tw//handle/246246/52327 | - |
dc.description.abstract | 藉由量測水滴在特定基材表面上的液滴直徑與前進角,代入modified Young’s equation導出的關係式,可求得此表面的線張力。本研究利用這個方法得到的線張力值為負號且大小都是10-6 J/m。本研究利用微觸印刷在基材表面製備親疏水性相間的自聚性單分子膜,探討當線寬變小時線張力對前進角造成的影響。當液滴三相線前進方向平行於親疏水相間直條紋時,三相線不扭曲,可以用Cassie equation (θC)來描述;當液滴三相線前進方向垂直於親疏水相間直條紋時,三相線會產生扭曲,可以用modified Cassie equation (θMC)來描述。矽烷分子在矽基材上形成親疏水性表面時,其前進角都偏大且隨著線寬變小時並沒有呈現明顯趨勢。這是因為矽烷分子在微觸印刷過程中容易堆積成多層分子膜。使用硫醇分子在金基材上形成親疏水性表面,我們求得的負的線張力值會讓在相同線寬下,θMC<θC。而隨著線寬變小前進角會跟著下降,θMC:79°(2μm) →62°(0.6μm) →54°(0.4μm)。金基材較大的表面粗糙度使得本研究的前進角實驗值都偏小。而使用光學顯微鏡可觀察到三相線的扭曲現象,但並非modified Cassie equation中假設的扭曲成半圓形。 | zh_TW |
dc.description.abstract | Measuring the droplet diameter and advancing contact angle of water on the substrate, we can calculate the line tension of this surface by using the relation derived from modified Young’s equaton. The values of line tension in this experiment were all negative and of the order of 10-6 J/m. When a droplet laid on a specific surface consisting of alternating and parallel hydrophobic and hydrophilic stripes, while the three-phase contact line is parallel to the stripe, the line will be smooth and can be portrayed by Cassie equation(θC); while the three-phase contact line is normal to the stripe, the line will be contorted and can be described by modified Cassie equation(θMC). We prepared the alternating and parallel hydrophobic and hydrophilic self-assembled monolayers on the substrate by using the micro-contact printing. In case of silane on silicon substrate, advancing contact angle values were larger and had no tendency with decreasing line width. Because we found that silane are easy to pile up in course of micro-contact printing. In case of thiol on gold substrate, the negative line tension value would let θMC<θC, and advancing contact angle decreases with decreasing line width, θMC:79°(2μm) →62°(0.6μm) →54°(0.4μm). Gold substrate with larger surface roughness let advancing contact angle values were smaller in this experiment. We observed the contortion of the three-phase contact line with optical microscope, the situation was not agreed with the semi-circle assumed in the modified Cassie equation. | en |
dc.description.tableofcontents | 中文摘要………………………………………………..Ⅰ 英文摘要………………………………………………..Ⅱ 目錄……………………………………………………..Ⅲ 圖目錄…………………………………………………..Ⅳ 表目錄…………………………………………………..Ⅷ 第一章 緒論……………………………………………1 1 簡介……………………………………..1 2 研究動機及目的………………………..2 第二章 文獻回顧……………………………………4 1 接觸角的物理意義……………………..4 2 線張力數值的文獻整理…………………12 3 自聚性單分子膜…………………………14 4 軟微影……………………………………20 5 原子力顯微鏡……………………………24 6 金基材表面的清洗 ……………26 第三章 實驗部分…………………………………..28 1 藥品器材………………………………28 2 實驗設備………………………………29 3 實驗步驟………………………………31 第四章 結果與討論……………………………………..41 1 前進接觸角與後退接觸角的量測………………………41 2 量測疏水性矽烷(DTS)成膜於矽表面的前進角………..42 3 量測矽表面親水性部份的前進角…………………………43 4 量測疏水性硫醇(HDT)成膜於金表面的前進角………….44 5 量測親水性硫醇成膜於金表面的前進角…………………45 6 母片及PDMS印章的製造……………………………………46 7 以微觸印刷製備親疏水性相間的矽表面…………………47 8 以微觸印刷製備親疏水性相間的金表面…………………48 9 量測親疏水性矽表面的前進角與後退角…………………49 10 量測親疏水性金表面的前進角與後退角…………………52 第五章 結論……………………………………………..55 參考文獻……………………………………………………..57 圖目錄 圖1-1 A schematic view of the construction of a self-assembled surfactant. (Ulman, 1991)….. 60 圖2-1 An illustration of the Young’s equation. (Ulman, 1991)…………... 61 圖2-2 The two liquid droplet states. (Callies and Quéré, 2005)…………. 62 圖2-3 2-Dimensional (X-Y) representations of two surfaces with the same f1 and f2 values, but very different contact line structures. The dark lines are meant to represent possible contact lines. ( Öner et al., 2000)…………………………………………………………63 圖2-4 A hypothetical corrugation of the three-phase contact line. (Drelich and Miller, 1993)……………64 圖2-5 Schmatic of a three-phase contact line for a liquid drop at a heterogeneous surface consisting of alternating and parallel hydrophobic and hydrophilic stripes. (Drelich et al., 1996)………..65 圖2-6 A large drop and a small drop at rough solid surface. (Drelich et al., 1996)…………………66 圖2-7 The effect of bubble size on the contact angle for the air/water/polyethylene system (dynamic technique). (Drelich et al., 1993)…………………………………67 圖2-8 Self-assembled monolayers are formed by simply immersing a substrate into a solution of the surface-active material. (Ulman, 1996)………………………68 圖2-9 Representation of a highly ordered monolayer of alkanethiolate formed on a gole surface. (Xia and Whitesides, 1998)……………69 圖2-10 Schematic representation of the formation of alkyl-siloxane monolayers by adsorption of alkyltrichlorosilanes (R(CH2)n-SiCl3, n=0-17) from solution onto silicon-silicon dioxide (Si/SiO2) subtrates. (Wasserman et al., 1989a)……………………………70 圖2-11 AFM 3-D comparison of surface topography for dry and wet growth conditions. (Wang and Lieberman, 2003)…………………71 圖2-12 General scheme proposed for the silanization reaction. (Brzoska et al., 1994)…………………………………………………………72 圖2-13 Representation of a highly ordered monolayer of alkanethiolate formed on a gold surface. (Gerber et al., 1996)……………………73 圖2-14 Comparison of STM images of SAMs of dodecanethiol (DDT) on Au(111) formed by μCP (left) and by adsorption from solution (right). (Larsen et al., 1997)………………………………………74 圖2-15 XPS S2P spectra of HS(CH2)15COOH molecules adsorbed on Au(111). (Li et al., 2003)…….………75 圖2-16 Schematic illustration of the procedure for casting PDMS replicas from a master having relief structures on its surface. (Xia and Whitesides, 1998)…………………………………………………76 圖2-17 Schematic illustration of possible deformations and distortions of microstructures in the surface of elastomers such as PDMS. a) pairing, b) sagging, c) shrinking. (Xia and Whitesides, 1998)……77 圖2-18 Summary of all procedures that have been used to reduce the size of features of SAMs generated using microcontact printing. (Xia and Whitesides, 1997)……………………………………………78 圖2-19 Illustration of microcontact printing under water and in air. (Xia and Whitesides, 1995)……………………………………………79 圖2-20 Procedure for fabricating a two-layer composite stamp. (Odem et al., 2002)…………………………………………………………80 圖2-21 Schematic illustration of procedures for micro-conact printing of DTS on a silicon wafer……………………………………………81 圖2-22 Methods of inking for microcontact printing. (Libioulle et al., 1999)………………………………………………………………82 圖2-23 Schematic representation of the setup of atomic force microscopy (AFM). (Binnig et al., 1986)………………………………………83 圖3-1 Schematic representation of Karl-Fisher moisture titrator. (Kyoto Electronics Manufacturing Co.)…………………………………84 圖3-2 Schematic representation of drop image grabbing setup…………85 圖4-1 液滴左右兩邊前進接觸角與液滴直徑随時間變化關係圖。…86 圖4-2 液滴左右兩邊後退接觸角與液滴直徑随時間變化關係圖。…87 圖4-3 水的前進角對矽晶片表面在1mM的DTS之異辛烷溶液相中成膜時間關係圖。……………………………………………………88 圖4-4 清洗乾淨的矽晶片表面之AFM影像圖。………………………88 圖4-5 矽晶片在1mM的DTS之異辛烷溶液中成膜24小時後的AFM影像圖。…………………………………………………………89 圖4-6 使用空白PDMS印章沾1mM的DTS之異辛烷溶液,以微觸印刷方式與矽晶片表面接觸,其接觸時間與水的前進角關係圖。...89 圖4-7 DTS在矽表面形成SAM,液滴在此表面的前進角與液滴直徑關係圖。…………………………………………………………90 圖4-8 DTS在矽表面形成SAM,液滴前進角餘弦值對液滴半徑倒數關係圖。…………………………………………………………90 圖4-9 空白矽表面,液滴前進角對液滴直徑關係圖。…………………91 圖4-10 水滴在親水性基材表面時,接觸角裝置擷取到的三相線影像圖。………………………………………………………………91 圖4-11 空白矽表面,液滴前進角餘弦值對液滴半徑倒數關係圖。………………………………………………………………92 圖4-12 先鍍10nm鉻膜再鍍100nm金膜的AFM影像。………………93 圖4-13 水的前進角對金表面在1mM的HDT之乙醇溶液相中成膜時間關係圖。…………………………………………………………94 圖4-14 使用空白PDMS印章沾1mM的HDT之乙醇溶液,以微觸印刷方式與金表面接觸,其接觸時間與水的前進角關係圖。……94 圖4-15 HDT在金表面形成SAM,液滴前進角對液滴直徑關係圖。……………………………………………………………95 圖4-16 HDT在金表面形成SAM,液滴前進角餘弦值對液滴半徑倒數關係圖。……………………………………………………………95 圖4-17 水的前進角對金表面在1mM的HS(CH2)15COOH之乙醇溶液相中成膜時間關係圖。………………………………………………96 圖4-18 HS(CH2)15COOH在金表面形成SAM,液滴前進角對液滴直徑關係圖。……………………………………………………………96 圖4-19 HS(CH2)15COOH在金表面形成SAM,液滴前進角餘弦值對液滴半徑倒數關係圖。………………………………………………97 圖4-20 以光學顯微鏡觀察2μm直條紋的PDMS印章(放大倍率10×100)。……………………………………………………………97 圖4-21 矽表面2μm線寬直條紋親疏水性圖案之AFM影像圖。…98 圖4-22 矽表面1μm線寬直條紋親疏水性圖案之AFM影像圖。…99 圖4-23 矽表面0.8μm線寬直條紋親疏水性圖案之AFM影像圖。100 圖4-24 矽表面0.6μm線寬直條紋親疏水性圖案之AFM影像圖。101 圖4-25 矽表面0.4μm線寬直條紋親疏水性圖案之AFM影像圖。102 圖4-26 矽表面Stripe2線寬直條紋親疏水性圖案之AFM影像圖103 圖4-27 矽表面Stripe3線寬直條紋親疏水性圖案之AFM影像圖104 圖4-28 矽表面Stripe4線寬直條紋親疏水性圖案之AFM影像圖105 圖4-29 矽表面Stripe5線寬直條紋親疏水性圖案之AFM影像圖106 圖4-30 矽表面Stripe6線寬直條紋親疏水性圖案之AFM影像圖107 圖4-31 金表面2μm線寬直條紋親疏水性圖案之AFM影像圖。108 圖4-32 金表面1μm線寬直條紋親疏水性圖案之AFM影像圖。109 圖4-33 金表面0.8μm線寬直條紋親疏水性圖案之AFM影像圖110 圖4-34 金表面0.6μm線寬直條紋親疏水性圖案之AFM影像圖。111 圖4-35 金表面0.4μm線寬直條紋親疏水性圖案之AFM影像圖。112 圖4-36 水滴在2μm線寬的親疏水性金表面,液滴三相線垂直於直條紋產生的扭曲情形。(放大50×)……...………………113 圖4-37 水滴在2μm線寬的親疏水性金表面,液滴三相線垂直於直條紋產生的扭曲情形。(放大100×)…………..…………………113 圖4-38 水滴在1μm線寬的親疏水性金表面,液滴三相線垂直於直條紋產生的扭曲情形。(放大100×)…….…………………………114 圖4-39 水滴在0.6μm線寬的親疏水性金表面,液滴三相線垂直於直條紋產生的扭曲情形。(放大100×)………..…………………114 表目錄 表2-1 線張力文獻值的整理。…………………………… 115 表4-1 矽晶片表面在疏水性矽烷溶液(1mM的DTS之異辛烷溶液)中成膜時間與水的前進角之關係。…………………………………116 表4-2 使用空白PDMS印章沾1mM的DTS之異辛烷溶液,以微觸印刷方式與矽晶片表面接觸,其接觸時間與水的前進角之關係。………………………………………………………………117 表4-3 不同線寬印章以微觸印刷法蓋1mM DTS在矽表面,其空白部份(即未與印章接觸部份)和空白矽的平均粗糙度數值。……………118 表4-4 矽晶片表面在疏水性矽烷溶液(0.25mM的DTS之異辛烷溶液)中成膜時間與水的前進角和表面平均粗糙度之關係。………118 表4-5 金表面在疏水性硫醇溶液(1mM的HDT之乙醇溶液)中成膜時間與水的前進角之關係。………………………………………119 表4-6 使用空白PDMS印章沾1mM的HDT之乙醇溶液,以微觸印刷方式與金表面接觸,其接觸時間與水的前進角之關係。………119 表4-7 金表面在親水性硫醇溶液(1mM的HS(CH2)15COOH之乙醇溶液)中成膜時間與水的前進角之關係。…………………………120 表4-8 蓋2μm疏水性條紋在矽表面的前進角,後退角與圖案線寬數據。……………………………………………………………121 表4-9 蓋1μm疏水性條紋在矽表面的前進角,後退角與圖案線寬數據。………………………………………………………………122 表4-10 蓋0.8μm疏水性條紋在矽表面的前進角,後退角與圖案線寬數據。………………………………………………………123 表4-11 蓋0.6μm疏水性條紋在矽表面的前進角,後退角與圖案線寬數據。…………………………………………………………124 表4-12 蓋0.4μm疏水性條紋在矽表面的前進角,後退角與圖案線寬數據。………………………………………………………125 表4-13 蓋Stripe2 (master原始設計線寬為line:0.254μm,trench:0.684μm)疏水性條紋在矽表面的前進角,後退角與圖案線寬數據。…126 表4-14 蓋Stripe3 (master原始設計線寬為line:1.678μm,trench:0.424μm)疏水性條紋在矽表面的前進角,後退角與圖案線寬數據。…127 表4-15 蓋Stripe4 (master原始設計線寬為line:1.48μm,trench:0.317μm)疏水性條紋在矽表面的前進角,後退角與圖案線寬數據。…128 表4-16 蓋Stripe5 (master原始設計線寬為line:0.844μm,trench:1.249μm)疏水性條紋在矽表面的前進角,後退角與圖案線寬數據。…129 表4-17 蓋Stripe6 (master原始設計線寬為line:0.829μm,trench:0.582μm)疏水性條紋在矽表面的前進角,後退角與圖案線寬數據。…130 表4-18 蓋十種不同線寬疏水性條紋在矽表面的前進角,後退角與圖案線寬數據。………………………………………………131 表4-19 蓋十種線寬疏水性條紋在矽表面,液滴三相線前進方向平行直條紋的前進角和後退角,與利用Cassie equation計算出的前進角理論值數據。……………………………………………132 表4-20 將2μm與0.8μm之親水部份前進角以不同數值進行估算133 表4-21 蓋十種線寬疏水性條紋在矽表面,液滴三相線前進方向垂直直條紋的前進角和後退角,與用Modified Cassie equation計算的前進角理論值數據。………………………………………134 表4-22 將2μm與0.8μm之親水部份前進角以不同數值進行估算135 表4-23 2μm親疏水性條紋在金表面的前進角,後退角與圖案線寬數據。……………………………………………………………136 表4-24 1μm親疏水性條紋在金表面的前進角,後退角與圖案線寬數據。……………………………………………………………137 表4-25 0.8μm親疏水性條紋在金表面的前進角,後退角與圖案線寬數據。………………………………………………………138 表4-26 0.6μm親疏水性條紋在金表面的前進角,後退角與圖案線寬數據。………………………………………………………139 表4-27 0.4μm親疏水性條紋在金表面的前進角,後退角與圖案線寬數據。…………………………………………………………140 表4-28 五種線寬親疏水性條紋在金表面的前進角,後退角與圖案線寬數據。………………………………………………………141 表4-29 五種線寬親疏水性條紋在金表面,液滴三相線前進方向平行直條紋的前進角和後退角,與用Cassie equation計算的前進角理論值數據。………………………………………………………142 表4-30 五種線寬親疏水性條紋在金表面,液滴三相線前進方向垂直直條紋的前進角和後退角,與利用Modified Cassie equation計算出的前進角理論值數據。……………………………………143 | zh_TW |
dc.format.extent | 6290079 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.language | zh-TW | en |
dc.language.iso | en_US | - |
dc.subject | 微觸印刷 | en |
dc.subject | 前進角 | en |
dc.subject | 三相線 | en |
dc.subject | 自聚性單分子膜 | en |
dc.subject | 線張力 | en |
dc.subject | micro-contact printing | en |
dc.subject | advancing contact angle | en |
dc.subject | three-phase contact line | en |
dc.subject | self-assembled monolayers | en |
dc.subject | line tension | en |
dc.title | 親疏水性表面接觸角與線張力之研究 | zh |
dc.title | The Study of the Contact Angle and Line Tension at a Heterogeneous Surface Consisting of Alternating and Parallel Hydrophobic/Hydrophilic Stripes | en |
dc.type | thesis | en |
dc.identifier.uri.fulltext | http://ntur.lib.ntu.edu.tw/bitstream/246246/52327/1/ntu-95-R93524004-1.pdf | - |
dc.relation.reference | Allara, D. L.;Nuzzo, R. G., Langmuir, 1985, 1, 45. Amirfazli, A.;Hänig, S.;Müller, A.;Neumann, A. W., Langmuir, 2000, 16, 2024. Amirfazli, A.;Kwok, D. Y.;Gaydos, J.;Neumann, A. W., Journal of Colloid and Interface Science, 1998, 205, 1. Bain, D. C.;Troughton, E. B.;Tao, Y. T.;Whitesides, G. M., Am. Che. Soc., 1989, 111, 321. Bico, J.;Marzolin, C.;Quéré, D., Europhys Lett., 1999, 47, 220. Bierbaum, K.;Grunze, M.;Baski, A. A.;Chi, L. F.;Schrepp, W.;Cassie, A. B. D.;Baxter, S., Trans. Faraday Soc., 1944, 40, 546. Binnig, G.;Quate, C. F.;Gerber, C., Phys. Rev. Lett., 1986, 56, 930. Brzoska, J. B.;Azouz, I. B.;Rondelez, F., Langmuir, 1994, 10, 4367-4373. Brzoska, J. B.;Shahidzadeh, N.;Rondelez, F., Nautre, 1992, 360, 719. Callies, M.;Quéré, D., Soft Matter, 2005, 1, 55-61. Cassie, A. B. D.;Baxter, S., Trans. Faraday Soc., 1944, 40, 546. Castner, D. G.;Hinds, K.;Grainger, D. W., Langmuir, 1996, 12, 5083. Chen, P.;Susnar, S. S.;Amirfazli, A.;Mak, C.;Neumann, A. W., Langmuir, 1997, 13, 3035. Delamarche, E.;Michel, B.;Biebuyck, H. A.;Gerber, C., Adv. Mater., 1996, 8, 719. Drelich, J.;Miller, J. D., Langmuir, 1993, 9, 619-621. Drelich, J.;Miller, J. D.;Hupka, J., Journal of Colloid and Inferface Science, 1993, 155, 379. Drelich, J.;Miller, J.;Good, R. J., Journal of Colloid and Inferface Science, 1996a, 179, 37-50. Drelich, J.;Wilbur, J. L.;Miller, J. D.;Whitesides, G.. M., Langmuir, 1996b, 12, 1913. Duncan, D.;Li, D.;Gaydos, J.;Neumann, A. W., Journal of Colloid and Inferface Science, 1995, 169, 256. Gaydos, J.;Neumann, A. W., Journal of Colloid and Inferface Science, 1987, 120, 76. Geissler, M.;Bernard, A.;Bietsch, A.;Schmid, H.;Michel, B.;Delamarche, E., J. Am. Chem. Soc., 2000, 122, 6303. Good, R. J.;Koo, M. N., Journal of Colloid and Inferface Science, 1979, 71, 283. Gu, Y.;Li, D.;Cheng, P., Journal of Colloid and Inferface Science, 1996, 180, 212. Kralchevsky, P. A.;Nikolov, A. D.;Ivanov, I. B., Journal of Colloid and Inferface Science, 1986, 112, 132. Larsen, N. B.;Biebuyck, H.;Delamarche, E.;Michel, B., J. Am. Chem. Soc., 1997, 119, 3017. Libioulle, L.;Bietsch, A.;Schmid, H., Langmuir, 1999, 15, 300. Li, L.;Chen, S.;Jiang, S., Langmuir, 2003, 19, 2974. Losic, D.;Shapter, J. G.;Goding, J., Langmuir, 2001, 17, 3306. Mrksich, M.;Whitesides, G. M., Annu. Rev. Biophys. Biomol. Struct., 1996, 25, 55. Neumann, A. W.;Spelt, J. K., Applied Surface Thermodynamics, 1996, Marcel Dekker, New York. Neves, B. R. A.;Salmon, M. E.;Troughton, E., Langmuir, 2000, 16, 2409. Odem, T. W.;Love, J. C.;Wolfe, D. B.;Paul, K. E.;Whitesides, G. M., Langmuir, 2002, 18, 5314-5320. Ogawa, H.;Chihera, T.;Taya, K. J., Am. Chem. Soc., 1985, 107, 1365. Öner, D.;McCarthy, T. J., Langmuir, 2000, 16, 7777-7782. Platikanov, D.;Nedyalkov, M.;Nasteva, V., Journal of Colloid and Inferface Science, 1980, 75, 620. Pompe, T.;Fery, A.;Herminghaus, S., Langmuir, 1999, 15, 2398. Ulman, A., An Introduction to Ultrathin Organic Film, 1991, Academic Press, San Diego. Ulman, A., Chem. Rev., 1996, 96, 1533-1554. Ulman, A., Langmuir, 1992, 8, 894. Wang, Y.;Lieberman, M., Langmuir, 2003, 19, 1159. Wasserman, S. R.;Tao, Y. T.;Whitesides, G. M., Langmuir, 1989a, 5, 1074-1087. Wasserman, S. R.;Whitesides, G. M.;Tidswell, I. M.;Ocko, B. M.;Pershan, P. S.;Axe, J. D., J. Am. Chem. Soc., 1989b, 111, 5852. Wenzel, R. N., Ind. Eng. Chem., 1936, 28, 988. Xia, Y.;Whitesides, G. M., Angew. Chem. Int. Ed., 1998, 37, 550-575. Xia, Y.;Whitesides, G. M., J. Am. Chem. Soc., 1995, 117, 3274-3275. Xia, Y.;Whitesides, G. M., Langmuir, 1997, 13, 2059-2067. Young, T., Philos. Trans. R. Soc. Lond., 1805, 95, 65. | en |
item.openairetype | thesis | - |
item.fulltext | with fulltext | - |
item.languageiso639-1 | en_US | - |
item.cerifentitytype | Publications | - |
item.grantfulltext | open | - |
item.openairecristype | http://purl.org/coar/resource_type/c_46ec | - |
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