https://scholars.lib.ntu.edu.tw/handle/123456789/628178
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Basu, Mrinmoyee | en_US |
dc.contributor.author | Zhang, Zhi-Wei | en_US |
dc.contributor.author | CHIH-JUNG CHEN | en_US |
dc.contributor.author | Lu, Tzu-Hsiang | en_US |
dc.contributor.author | Hu, Shu-Fen | en_US |
dc.contributor.author | Liu, Ru-Shi | en_US |
dc.date.accessioned | 2023-02-15T08:00:54Z | - |
dc.date.available | 2023-02-15T08:00:54Z | - |
dc.date.issued | 2016-10-12 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/628178 | - |
dc.description.abstract | An efficient H2 evolution catalyst is developed by grafting CoSe2 nanorods into C3N4 nanosheets. The as-obtained C3N4-CoSe2 heterostructure can show excellent performance in H2 evolution with outstanding durability. To generate phatocathode for photoelectrochemical water splitting CoSe2 grafted in C3N4 was decorated on the top of p-Si microwires (MWs). p-Si/C3N4-CoSe2 heterostructure can work as an efficient photocathode material for solar H2 production in PEC water splitting. In 0.5 M H2SO4, p-Si/C3N4-CoSe2 can afford photocurrent density -4.89 mA/cm2 at "0" V vs RHE and it can efficiently work for 3.5 h under visible light. Superior activity of C3N4-CoSe2 compared to CoSe2 toward H2 evolution is explained with the help of impedance spectroscopy. | en_US |
dc.language.iso | en | en_US |
dc.publisher | AMER CHEMICAL SOC | en_US |
dc.relation.ispartof | ACS applied materials & interfaces | en_US |
dc.subject | C3N4−CoSe2; heterostructure; hydrogen evolution; nanorod; photocathode | en_US |
dc.title | CoSe2 Embedded in C3N4: An Efficient Photocathode for Photoelectrochemical Water Splitting | en_US |
dc.type | journal article | en |
dc.identifier.doi | 10.1021/acsami.6b06520 | - |
dc.identifier.pmid | 27635665 | - |
dc.identifier.scopus | 2-s2.0-84991380592 | - |
dc.identifier.isi | WOS:000385469000029 | - |
dc.identifier.url | https://api.elsevier.com/content/abstract/scopus_id/84991380592 | - |
dc.relation.pages | 26690 | en_US |
dc.relation.journalvolume | 8 | en_US |
dc.relation.journalissue | 40 | en_US |
dc.relation.pageend | 26696 | en_US |
item.fulltext | no fulltext | - |
item.openairetype | journal article | - |
item.languageiso639-1 | en | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.grantfulltext | none | - |
item.cerifentitytype | Publications | - |
crisitem.author.dept | Program in Nanoengineering and Nanoscience | - |
crisitem.author.orcid | 0000-0002-3309-7908 | - |
crisitem.author.parentorg | Graduate School of Advanced Technology | - |
顯示於: | 重點科技研究學院 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。