dc.description.abstract | Photo-lithography is an important process in the property of LED. There are three major parts in this process : 1. Photo-resist coating 2. Expoursion 3. Development. In fact, it will be finished the process with seven steps in detail. It will be more complex with whole process. In this experiment, we want to use the advantage of SAM to protect the ITO surface during etching process. Therer are three parts in this experiment : 1. Using contact angle, XPS, AFM, cyclic voltammetry and EIS analysis method discusses the property of SAM film with different conditions of SAM reation; 2. In the etchant of amorphous ITO, it analyzes etching rate, OCP and LSV method. It studies the properties of amorphous ITO in diffirent concentrations and types etchant, then finds the relationships between these experiment condition; 3. Combine the suitable condition of part 1 and part 2, using SEM, OCP and tafel method focuses on the level of protecting ITO then uses the BOE etchant to remove SAM on ITO. Furthermore, estimates the possibility of replacing the role of photo-resist.art I : In this experiment, we control two major conditions : 1. SAM chain length 2. The temperature of SAM reaction. From the result of SAM, longer self-assembly molecular owe to arrange in order and condenses tightly very much, cause by the force between each molecular. From the result of AFM and CV analysis, when the experiment of temperature is below Tc, the SAM film owns to perform uiniform.art II : In the process of etching with OXA solution, the etching rate of ITO will increase following the concentration of OXA. When the concentration of OXA is upward 3.4 wt%, the etching rate will approach constant. From tafel analysis method, adding acetic acid (AA) and tartaric acid (TA) , the corrosion potential will decrease from -0.331V to -0.38V. Adding AA and TA, it will change the ITO surface to remove easily, but for etching rate measurement, adding AA and TA will decrease the etching rate of ITO film. Cause of two results, adding chelate will change the proiperty of ITO surface, it will not increase the etching process. For the amount of chelate, when adding 0.34 wt% in OXA solution, it differs with the other one. From these results, choosing the 0.34 wt% chelate undergoes the etching process.art III : Focus on the ITO with protector-SAM in etching process. From tafel analysis result, SAM exists on ITO surface in the etchant will increase the corrosion potential from -0.38V to -0.2~0V. Only OXA 3.4 wt% system, from SEM result, the edge will occur default. If reducing the scale of element, this condition should not be accepted. At OXA 3.4 wt% + AA 0.34 wt% or OXA 3.4 wt% + TA 0.34 wt% condition, the edge of etching performs smooth one. For removal SAM, useing BOE etchant can remove SAM completely and BOE can not hurt ITO surface. | en |
dc.description.tableofcontents | 摘要 Ibstract III目錄 VIII目錄 IX一章 緒論 1.1 微影製程(Photo Lithography) 2.2 自組裝單分子膜(Self-Assembled Monolayers, SAMs)簡介 4.3 研究目的 5二章 文獻回顧 9.1 自聚性薄膜分類 10.1.1 LM (Langmuir Monolayer) 10.1.2 LB Monolayer (Langmuir-Blodgett Monolayer) 10.1.3 SAM(Self-Assembled Monolayer) 10.2 導電玻璃之修飾 12.2.1 導電玻璃之種類 12.2.2 透明導電玻璃ITO與自組裝薄膜 13.3 導電玻璃之濕式蝕刻 16.3.1 晶體結構 16.3.2 濕式蝕刻機制 17.3.3 ITO濕式蝕刻 18.3.4 自組裝層應用於乾式蝕刻製程 19三章 理論分析 29.1 線性直流極化曲線(Linear Sweep Voltammetry, LSV) 29.2 極化曲線變化所代表之意義 33.3 循環伏安(Cyclic Voltammetry, CV)分析 35.4 循環伏安曲線變化所代表之意義 38.5 交流阻抗分析(Electrochemical Impedance Spectroscopy, EIS) 39.6 阻抗頻譜圖與電路模型的關連性 46四章 實驗設備 59.1 實驗設備與藥品 59.1.1 實驗設備 59.1.2 實驗用藥品 59.1.3 實驗分析設備 60.2 實驗前處理 61.2.1 ITO導電玻璃的清潔 61.2.2 成膜溶劑甲苯(Toluene)除水 62.2.3 自組裝溶液除水 62.2.4 手套袋配置 63.3 實驗內容 63.3.1 ITO薄膜特性分析 63.3.2 蝕刻速率之量測 64.3.3 自組裝單分子薄膜製備 64.3.4 ITO薄膜蝕刻之電化學特性 65.3.5 自組裝薄膜阻止蝕刻反應進行之可行性 66.3.6 自組裝薄膜脫附 66.4 實驗分析 67.4.1 ITO導電玻璃表面的接觸角 67.4.2 線性直流極化曲線(Linear Sweep Voltammetry, LSV) 68.4.3 循環伏安(Cyclic Voltammetry, CV)分析 69.4.4 自組裝單分子膜覆蓋率之計算 69.4.5 交流阻抗分析(Electrochemical Impedance Spectroscopy, EIS) 71.4.6 原子力顯微鏡(Atomic Force Microscopy, AFM)分析 72.4.7 X光光電子能譜儀(X-ray Photoelectron Spectrometer; XPS)分析 73.4.8 X光繞射儀(X-ray Diffractometer, XRD)分析 74.4.9 掃瞄式電子顯微鏡(Scanning Electron Microscope;SEM) 76五章 結果與討論 81.1 銦錫氧化物薄膜(ITO film)性質分析 81.1.1 銦錫氧化物薄膜晶相分析 81.1.2 銦錫氧化物薄膜組成分析 82.1.3 銦錫氧化物薄膜表面型態分析 82.2 自組裝層性質分析 83.2.1 自組裝反應時間對自組裝層之影響 83.2.1.1 自組裝層表面組成分析 83.2.1.2 自組裝層表面型態分析 85.2.1.3 自組裝層表面親疏水性分析 85.2.1.4 自組裝層之電化學性質分析 87.2.1.5 自組裝層表面之覆蓋率計算 90.2.1.6 自組裝層交流阻抗分析 92.2.2 自組裝分子碳鏈數目對自組裝層之影響 96.2.2.1 自組裝層表面親疏水性分析 96.2.2.2 自組裝層表面之電化學性質分析 96.2.2.3 自組裝層交流阻抗分析 97.2.3 自組裝反應溫度對自組裝層之影響 99.2.3.1 自組裝層表面組成分析 99.2.3.2 自組裝層表面親疏水性分析 100.2.3.3 自組裝層表面之電化學性質分析 100.2.3.4 自組裝層交流阻抗分析 102.3 銦錫氧化物濕式蝕刻之電化學研究 104.3.1 銦錫氧化物蝕刻-草酸蝕刻液系統 104.3.2 銦錫氧化物蝕刻-錯合物添加效應 105.3.3自組裝層輔助銦錫氧化物蝕刻 107.4 自組裝層脫附研究 108.4.1 循環伏安法(Cyclic Voltammetry)分析 109.4.2 薄膜表面組成分析 110.4.3 自組裝層取代微影製程之可行性 111六章 結論 170號說明 174考文獻 176 | en |