https://scholars.lib.ntu.edu.tw/handle/123456789/631951
Title: | Impact of layer thickness on the operating characteristics of In2O3/ZnO heterojunction thin-film transistors | Authors: | Alghamdi, Wejdan S. Fakieh, Aiman Faber, Hendrik YEN-HUNG LIN Lin, Wei Zhi Lu, Po Yu CHIEN-HAO LIU Salama, Khaled Nabil Anthopoulos, Thomas D. |
Keywords: | CHANNEL THICKNESS | Issue Date: | 5-Dec-2022 | Publisher: | AIP Publishing | Journal Volume: | 121 | Journal Issue: | 23 | Source: | Applied Physics Letters | Abstract: | Combining low-dimensional layers of dissimilar metal oxide materials to form a heterojunction structure offers a potent strategy to improve the performance and stability of thin-film transistors (TFTs). Here, we study the impact of channel layer thicknesses on the operating characteristics of In2O3/ZnO heterojunction TFTs prepared via sputtering. The conduction band offset present at the In2O3/ZnO heterointerface affects the device's operating characteristics, as is the thickness of the individual oxide layers. The latter is investigated using a variety of experimental and computational modeling techniques. An average field-effect mobility (μFE) of >50 cm2 V-1 s-1, accompanied by a low threshold voltage and a high on/off ratio (∼108), is achieved using an optimal channel configuration. The high μFE in these TFTs is found to correlate with the presence of a quasi-two-dimensional electron gas at the In2O3/ZnO interface. This work provides important insight into the operating principles of heterojunction metal oxide TFTs, which can aid further developments. |
URI: | https://scholars.lib.ntu.edu.tw/handle/123456789/631951 | ISSN: | 00036951 | DOI: | 10.1063/5.0126935 |
Appears in Collections: | 機械工程學系 |
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