https://scholars.lib.ntu.edu.tw/handle/123456789/633788
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Wang, Xuejing | en_US |
dc.contributor.author | Lin, Yung Chen | en_US |
dc.contributor.author | Tai, Chia Tse | en_US |
dc.contributor.author | Lee, Seok Woo | en_US |
dc.contributor.author | Lu, Tzu Ming | en_US |
dc.contributor.author | Shin, Sun Hae Ra | en_US |
dc.contributor.author | Addamane, Sadhvikas J. | en_US |
dc.contributor.author | Sheehan, Chris | en_US |
dc.contributor.author | JIUN-YUN LI | en_US |
dc.contributor.author | Kim, Yerim | en_US |
dc.contributor.author | Yoo, Jinkyoung | en_US |
dc.date.accessioned | 2023-07-17T07:09:35Z | - |
dc.date.available | 2023-07-17T07:09:35Z | - |
dc.date.issued | 2022-11-01 | - |
dc.identifier.issn | 2166-532X | - |
dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/633788 | - |
dc.description.abstract | Realizing a tubular conduction channel within a one-dimensional core-shell nanowire (NW) enables better understanding of quantum phenomena and exploration of electronic device applications. Herein, we report the growth of a SiGe(P)/Si core/shell NW heterostructure using a chemical vapor deposition coupled with vapor-liquid-solid growth mechanism. The entire NW heterostructure behaves as a p-type semiconductor, which demonstrates that the high-density carriers are confined within the 4 nm-thick Si shell and form a tubular conduction channel. These findings are confirmed by both calculations and the gate-dependent current-voltage (Id-Vg) characteristics. Atomic resolution microscopic analyses suggest a coherent epitaxial core/shell interface where strain is released by forming dislocations along the axial direction of the NW heterostructure. Additional surface passivation achieved via growing a SiGe(P)/Si/SiGe core/multishell NW heterostructure suggests potential strategies to enhance the tubular carrier density, which could be further modified by improving multishell crystallinity and structural design. | en_US |
dc.relation.ispartof | APL Materials | en_US |
dc.title | Formation of tubular conduction channel in a SiGe(P)/Si core/shell nanowire heterostructure | en_US |
dc.type | journal article | en |
dc.identifier.doi | 10.1063/5.0119654 | - |
dc.identifier.scopus | 2-s2.0-85143201414 | - |
dc.identifier.url | https://api.elsevier.com/content/abstract/scopus_id/85143201414 | - |
dc.relation.journalvolume | 10 | en_US |
dc.relation.journalissue | 11 | en_US |
item.fulltext | no fulltext | - |
item.cerifentitytype | Publications | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.grantfulltext | none | - |
item.openairetype | journal article | - |
crisitem.author.dept | Electrical Engineering | - |
crisitem.author.dept | Electronics Engineering | - |
crisitem.author.orcid | 0000-0003-4905-9954 | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
crisitem.author.parentorg | College of Electrical Engineering and Computer Science | - |
顯示於: | 電機工程學系 |
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