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  4. A Development of The ITO-AgTi (or AgTiCu)-ITO Transparent Conductive Thin Films
 
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A Development of The ITO-AgTi (or AgTiCu)-ITO Transparent Conductive Thin Films

Date Issued
2007
Date
2007
Author(s)
Chen, Shi-Wei
DOI
zh-TW
URI
http://ntur.lib.ntu.edu.tw//handle/246246/55199
Abstract
Using ITO-Metal-ITO (IMI) multilayer structures is the simplest and most effective way to improve the characteristics of the transparent conductive oxide (TCO). The IMI structures have quit low sheet resistance comparing with the single-layer TCO films, such as ITO, although their transmittance is slightly lower than ITO. The characteristics of IMI films strongly depend on the intermediate layer. Silver is the best intermediate layer of IMI films, because it has higher transparency and conductivity than other metals when the film is very thin. However, pure silver films are unstable and easy to agglomerate at a high temperature. An increase in roughness will reduce the conductivity and transparency of IMI films. This study proposes to increase the stability of the Ag layer by alloying with doped Ti or Cu atoms, consequently, to increase the stability of the IMI films. Furthermore, the effect of the doping elements on the silver layer as well as the IMI film is also investigated through varying the deposition temperature, durability testing and annealing. The results indicate that, by the addition of the doping Ti atoms, the roughening of the silver film due to the relaxation of strain energy as deposition can be retarded; the agglomeration of the silver film induced by the moisture penetration can be retarded; and the interdiffusion between the silver and ITO layers when the film is annealed at a high temperature in air can also be retaeded. Therefore, the Ag-Ti film owns smooth and stable surface morphology, the ITO-AgTi-ITO and the ITO-AgTiCu-ITO films keep high conductivity, transparency and excellent durability. After annealing, the ITO-AgTiCu-ITO film owns high transparency (transparency = 91.08 %, it is close to that of the single-layer ITO), quit low resistivity (resistivity = 4.66 x 10-5 Ω.cm, it is lower than that of the single-layer ITO about one order) and excellent durability. The ITO-AgTiCu-ITO film is suitable to replace the single-layer ITO film and be applied as the transparent electrode of the optic-electric devices.
Subjects
三明治透明導電薄膜
銀鈦
銀鈦銅
耐候性
IMIITO-Metal-ITO transparent conductive thin film
sandwich structure
resistivity
transparency
durability
Type
thesis
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