|Title:||Reduction of Grain Size and Ordering Temperature in L10 FePt Thin Films||Authors:||Sun, A.C.
|Keywords:||Grain size;order–disorder transformations;sputtering.||Issue Date:||Oct-2005||Publisher:||Taipei:National Taiwan University Dept Chem Engn||Journal Volume:||VOL. 41||Journal Issue:||NO. 10||Start page/Pages:||-||Source:||IEEE TRANSACTIONS ON MAGNETICS||Abstract:||
Single-layer polycrystalline Fe52Pt48 alloy thin films were deposited on preheated natural-oxidized (100) silicon wafer b y conventional
sputtering method at room temperature. The as-deposited films are soft fcc FePt phase. After suitable temperature annealing and
furnace cooling, the as-deposited films are transformed from disordered soft fcc FePt phase into ordered fct 10 FePt phase. The ordering
temperature of 10 FePt phase could be reduced to about 350 C by preheating substrate to 300 C followed by furnace cooling
treatment. The grain size of FePt was found to decrease as the ordering temperature of 10 FePt phase was reduced. After annealing at
350 C for 1 h, the in-plane coercivity ( ) of the 100-nm Fe52Pt48 alloy thin film is about 6 kOe, and the average grain size is about
|Appears in Collections:||材料科學與工程學系|
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