Reduction of Grain Size and Ordering Temperature in L10 FePt Thin Films
Resource
IEEE TRANSACTIONS ON MAGNETICS, VOL. 41, NO. 10, OCTOBER 2005
Journal
IEEE TRANSACTIONS ON MAGNETICS
Journal Volume
VOL. 41
Journal Issue
NO. 10
Pages
-
Date Issued
2005-10
Date
2005-10
Author(s)
Sun, A.C.
Chen, S.C.
Kuo, P.C.
Chou, C.Y.
Fang, Y.H.
Hsu, Jen-Hwa
Huang, H.L.
Chang, H.W.
DOI
246246/200611150121272
Abstract
Single-layer polycrystalline Fe52Pt48 alloy thin films were deposited on preheated natural-oxidized (100) silicon wafer b y conventional
sputtering method at room temperature. The as-deposited films are soft fcc FePt phase. After suitable temperature annealing and
furnace cooling, the as-deposited films are transformed from disordered soft fcc FePt phase into ordered fct 10 FePt phase. The ordering
temperature of 10 FePt phase could be reduced to about 350 C by preheating substrate to 300 C followed by furnace cooling
treatment. The grain size of FePt was found to decrease as the ordering temperature of 10 FePt phase was reduced. After annealing at
350 C for 1 h, the in-plane coercivity ( ) of the 100-nm Fe52Pt48 alloy thin film is about 6 kOe, and the average grain size is about
6 nm.
Subjects
Grain size
order–disorder transformations
sputtering.
Publisher
Taipei:National Taiwan University Dept Chem Engn
Type
journal article
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