https://scholars.lib.ntu.edu.tw/handle/123456789/73438
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Maikap, S. | en |
dc.contributor.author | Lee, H.Y. | en |
dc.contributor.author | Wang, T.Y. | en |
dc.contributor.author | Tzeng, P.J. | en |
dc.contributor.author | Wang, C.C. | en |
dc.contributor.author | Lee, L.S. | en |
dc.contributor.author | Liu, K.C. | en |
dc.contributor.author | Yang, J.R. | en |
dc.contributor.author | Tsai, M.J. | en |
dc.creator | Maikap, S.; Lee, H.Y.; Wang, T.Y.; Tzeng, P.J.; Wang, C.C.; Lee, L.S.; Liu, K.C.; Yang, J.R.; Tsai, M.J. | en |
dc.date | 2007 | en |
dc.date.accessioned | 2008-12-24T02:23:00Z | - |
dc.date.accessioned | 2018-06-28T21:41:00Z | - |
dc.date.available | 2008-12-24T02:23:00Z | - |
dc.date.available | 2018-06-28T21:41:00Z | - |
dc.date.issued | 2007 | - |
dc.identifier.uri | http://ntur.lib.ntu.edu.tw//handle/246246/93241 | - |
dc.format | application/pdf | en |
dc.format.extent | 347121 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.language | en | en |
dc.language.iso | en_US | - |
dc.relation | Semiconductor Science and Technology 22: 884-889 | en |
dc.relation.ispartof | Semiconductor Science and Technology 22: | - |
dc.title | Charge trapping characteristics of atomic-layer-deposited HfO2 films with Al2O3 as a blocking oxide for high-density non-volatile memory device applications | en |
dc.type | journal article | en |
dc.relation.pages | 884-889 | - |
dc.identifier.uri.fulltext | http://ntur.lib.ntu.edu.tw/bitstream/246246/93241/1/2.pdf | - |
item.openairetype | journal article | - |
item.fulltext | with fulltext | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.grantfulltext | open | - |
item.languageiso639-1 | en_US | - |
item.cerifentitytype | Publications | - |
顯示於: | 材料科學與工程學系 |
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