https://scholars.lib.ntu.edu.tw/handle/123456789/73454
Title: | Structure and formation mechanism of V defects in multiple InGaN/GaN quantum well layers | Authors: | Shiojiri, M. Chuo, C. C. Hsu, J. T. Yang, J. R. Saijo, H. |
Issue Date: | 2006 | Journal Issue: | 073505 | Start page/Pages: | - | Source: | Journal of Applied Physics 99: | URI: | http://ntur.lib.ntu.edu.tw//handle/246246/93259 |
Appears in Collections: | 材料科學與工程學系 |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.