https://scholars.lib.ntu.edu.tw/handle/123456789/73459
標題: | Effects of Silicon Doping on the Nanostructures of InGaN/GaN Quantum Wells | 作者: | Chen, M. K. Cheng, Y.C. Chen, J. Y. Wu, C. M. Yang, C. C. Ma, K. J. JER-REN YANG Rosenauer, A. |
關鍵字: | A1. Segregation; A3. Quantum wells; B1. Nitrides; B3. Light emitting diodes | 公開日期: | 2005 | 卷: | 279 | 期: | 2 | 起(迄)頁: | 55-64 | 來源出版物: | Journal of Crystal Growth | 摘要: | We compare the results of strain state analysis (SSA) and photoluminescence (PL) of six InGaN/GaN quantum well samples with un-doped, well-doped, and barrier-doped structures. Based on the SSA images, a strain relaxation model is proposed for describing the nanostructure differences between the three sets of sample of different doping conditions. In the barrier-doped samples, the hetero-structure-induced strains are fully relaxed such that spinodal decomposition is effectively induced. Therefore, strongly clustering nanostructures are observed. In the well-doped samples, strains are partially relaxed and the spinodal decomposition process can be slightly induced. Hence, weaker composition fluctuations are observed. Then, in the un-doped samples, the un-relaxed strains result in higher miscibility between InN and GaN, leading to the relatively more uniform composition distributions. Between the low- and high-indium samples, higher indium content leads to a stronger clustering behavior. The strain relaxations in the well-doped and barrier-doped samples result in their unclear S-shaped behaviors of PL spectral peaks. The enhanced carrier localization and reduced quantum-confined Stark effect in the barrier-doped samples are responsible for their significant increases of radiative efficiency. © 2005 Elsevier B.V. All rights reserved. |
URI: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-17744379766&doi=10.1016%2fj.jcrysgro.2005.02.018&partnerID=40&md5=4f0ac64d18b272af1784741d040c580b | DOI: | 10.1016/j.jcrysgro.2005.02.018 |
顯示於: | 材料科學與工程學系 |
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