Repository logo
  • English
  • 中文
Log In
Have you forgotten your password?
  1. Home
  2. College of Engineering / 工學院
  3. Materials Science and Engineering / 材料科學與工程學系
  4. Study of Nickel Oxide Thin Films by Atomic Layer Deposition
 
  • Details

Study of Nickel Oxide Thin Films by Atomic Layer Deposition

Date Issued
2011
Date
2011
Author(s)
Lee, Wei-Chang
URI
http://ntur.lib.ntu.edu.tw//handle/246246/251665
Abstract
This study develops an atomic layer deposition (ALD) process to deposit NiO thin films, using ozone as an oxidizing source and nickelocene (Ni(Cp)2) as a Ni-containing precursor. The ALD process window was found to be 150~250℃ with a deposition rate of ~0.7 A per cycle. XPS analysis revealed that the films were composed of nearly stoichiometric, Ni/O ratio = 0.95, with < 4% carbon content, indicating thorough reaction and low level of Ni vacancies which are typical of NiO films. GIXRD, SEM and AFM analyses show that the films were cubic polycrystalline, with NaCl-type structure, with ~12 nm crystal size and smooth surface. Additionally, the ALD NiO films were found to be effective gas-diffusion barriers when deposited on polymer substrates, with similar gas permeability to those of other crystalline metal oxide films by ALD, such as ZnO and HfO2. In terms of optical transparency, the ALD NiO films with 70nm thickness showed > 65% light transmittance across the visible light wavelength. From the visible light spectrum, the optical band gap of the ALD NiO was estimated to be 3.47eV. In terms of electrical properties, the ALD NiO films contained very low level of carrier (hole) concentration and thus were highly electrically insulating. This was attributed to the nearly stoichiometric Ni/O ratio of the films, which minimized the amount of holes associated with Ni vacancies or interstitial O atoms.
Subjects
Nickel oxide
Atomic layer deposition
P-type transparent semiconductor
Thin films
Nickelocene
Type
thesis
File(s)
Loading...
Thumbnail Image
Name

ntu-100-R98527049-1.pdf

Size

23.54 KB

Format

Adobe PDF

Checksum

(MD5):f2c46c91378ff6fdcb3d0e481a648e1e

臺大位居世界頂尖大學之列,為永久珍藏及向國際展現本校豐碩的研究成果及學術能量,圖書館整合機構典藏(NTUR)與學術庫(AH)不同功能平台,成為臺大學術典藏NTU scholars。期能整合研究能量、促進交流合作、保存學術產出、推廣研究成果。

To permanently archive and promote researcher profiles and scholarly works, Library integrates the services of “NTU Repository” with “Academic Hub” to form NTU Scholars.

總館學科館員 (Main Library)
醫學圖書館學科館員 (Medical Library)
社會科學院辜振甫紀念圖書館學科館員 (Social Sciences Library)

開放取用是從使用者角度提升資訊取用性的社會運動,應用在學術研究上是透過將研究著作公開供使用者自由取閱,以促進學術傳播及因應期刊訂購費用逐年攀升。同時可加速研究發展、提升研究影響力,NTU Scholars即為本校的開放取用典藏(OA Archive)平台。(點選深入了解OA)

  • 請確認所上傳的全文是原創的內容,若該文件包含部分內容的版權非匯入者所有,或由第三方贊助與合作完成,請確認該版權所有者及第三方同意提供此授權。
    Please represent that the submission is your original work, and that you have the right to grant the rights to upload.
  • 若欲上傳已出版的全文電子檔,可使用Open policy finder網站查詢,以確認出版單位之版權政策。
    Please use Open policy finder to find a summary of permissions that are normally given as part of each publisher's copyright transfer agreement.
  • 網站簡介 (Quickstart Guide)
  • 使用手冊 (Instruction Manual)
  • 線上預約服務 (Booking Service)
  • 方案一:臺灣大學計算機中心帳號登入
    (With C&INC Email Account)
  • 方案二:ORCID帳號登入 (With ORCID)
  • 方案一:定期更新ORCID者,以ID匯入 (Search for identifier (ORCID))
  • 方案二:自行建檔 (Default mode Submission)
  • 方案三:學科館員協助匯入 (Email worklist to subject librarians)

Built with DSpace-CRIS software - Extension maintained and optimized by 4Science