DC 欄位 | 值 | 語言 |
dc.contributor | 臺灣大學: 材料科學與工程學研究所 | zh-TW |
dc.contributor | 蔡豐羽 | zh |
dc.contributor.author | 張貽能 | zh-TW |
dc.contributor.author | Chang, Yi-Neng | en |
dc.creator | 張貽能 | zh-TW |
dc.creator | Chang, Yi-Neng | en |
dc.date | 2011 | en |
dc.date.accessioned | 2013-03-22T02:44:47Z | - |
dc.date.accessioned | 2018-06-28T21:51:02Z | - |
dc.date.available | 2013-03-22T02:44:47Z | - |
dc.date.available | 2018-06-28T21:51:02Z | - |
dc.date.issued | 2011 | - |
dc.identifier.uri | http://ntur.lib.ntu.edu.tw//handle/246246/251667 | - |
dc.description.abstract | This study addresses in stability issue of flexible polymer light-emitting diode (PLED) devices with a two-pronged approach based on atomic layer deposition (ALD): developing an inverted PLED device structure—which offers far superior inherent stability to that of the conventional structure—with a dual-functioning electron-injection layer/gas barrier by ALD at plastic-substrate-compatible temperatures, and developing a thin-film encapsulation technique by ALD that is compatible with the inverted PLED device. ALD ZnO was used as the electron-injection layer (EIL)/gas barrier, and a range of plastic-compatible deposition temperatures (70-90℃) were examined. Lower deposition temperatures were found to yield superior device performance, because they yielded lower carrier concentrations which allowed more effective hole-blocking at the cathode of the PLED devices, and they provided better gas-barrier function as a result of their low crystallinity. When applying an ALD HfO2/Al2O3 nanolaminated film to the PLED devices as an encapsulation layer, we observed severe encapsulation-induced degradation due to aggregation of our MoO3 hole-injection layer at the ALD temperature of 90ºC. We eliminated this degradation by developing a low-temperature (70 ºC) ALD process of Al2O3/ZnO nanolaminates, which combined with the ZnO EIL/gas barrier enabled plastic-based PLED devices to retain ~90% of their initial luminance upon storing in air for 1610 hours. | en |
dc.format.extent | 5705668 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.language | en | en |
dc.language.iso | en_US | - |
dc.subject | 高分子發光二極體 | zh |
dc.subject | 原子層沉積技術 | zh |
dc.subject | 氧化鋅 | zh |
dc.subject | 阻氣膜 | zh |
dc.subject | 封裝 | zh |
dc.subject | polymer light-emitting diode | en |
dc.subject | atomic layer deposition | en |
dc.subject | zinc oxide | en |
dc.subject | gas barrier | en |
dc.subject | encapsulation | en |
dc.title | 利用原子層沉積技術製備高分子發光二極體之電子注入及阻氣層 | zh-TW |
dc.title | Electron Injection and Gas Barrier Layers by Atomic Layer Deposition for Polymer LED | en |
dc.type | thesis | en |
dc.identifier.uri.fulltext | http://ntur.lib.ntu.edu.tw/bitstream/246246/251667/1/ntu-100-R98527014-1.pdf | - |
item.fulltext | with fulltext | - |
item.openairetype | thesis | - |
item.languageiso639-1 | en_US | - |
item.openairecristype | http://purl.org/coar/resource_type/c_46ec | - |
item.grantfulltext | open | - |
item.cerifentitytype | Publications | - |
顯示於: | 材料科學與工程學系
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