https://scholars.lib.ntu.edu.tw/handle/123456789/74501
Title: | 矽碳氮三元寬能隙半導體之光導電度及傳導特性研究 | Authors: | 陳俊維 | Issue Date: | 2004 | Publisher: | 臺北市:國立臺灣大學材料科學與工程學研究所 | Abstract: | 本計劃主要是探討矽碳氮薄膜之光導電特性。主要是探討隨著碳成份之改變,矽碳氮薄膜之光學性質之變化。 我们並成功的作出一個高光電流/暗電流比之紫外光偵測器。 。此研究即將於Diamond and Related materials(2005)發表,並且有一篇正在預計投槁至 Applied Physics Letters。 Optical properties of amorphous silicon carbon nitride thin films as a function of carbon content have been studied by the spectral micro-reflectometry. The compositions of a-SiCN thin films deposited with different CH4 flow rates were analyzed by X-ray photoemission spectroscopy (XPS). It was found that the transmittance of a-SiCN thin films decreases with the increasing carbon content ; the index of refraction n varies from ~2.0 to ~2.2 and the optical gap (Tauc gap) opt E value progressively decreases from 4.1 to 3.3 eV while the carbon content changes from 0 to 25 % in the films. In addition, a MSM (metal-semiconductor-metal) photodetector device based on the a-SiCN thin film demonstrates excellent selective sensing features with a large photo-to-dark current ratio about 1800 under illumination of the 250 nm UV light source, providing potential applications for low-cost UV detection. |
URI: | http://ntur.lib.ntu.edu.tw//handle/246246/12461 | Other Identifiers: | 922112M002034 | Rights: | 國立臺灣大學材料科學與工程學研究所 |
Appears in Collections: | 材料科學與工程學系 |
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922112M002034.pdf | 142.41 kB | Adobe PDF | View/Open |
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