CoTbAg薄膜之研製及其應用於單層近場光學寫入磁通量讀取之記錄媒體的可行性探討
Date Issued
2005
Date
2005
Author(s)
郭博成
DOI
932216E002023
Abstract
This work fabricates a single-layer
CoTbAg film for near-field optical write and
magnetic flux detection recording medium
application. Co68.48-XTb30.52AgX films with X=
0~25 at.% are deposited on glass and naturally
oxidized silicon wafer substrate by dc
magnetron sputtering. The magnetic film is
sandwiched between SiNx protective layers to
prevent oxidization. The effects of
non-magnetic element Ag content on the
magnetic properties and microstructure of the
film are investigated. X-ray diffraction and
transmission electron microscope diffraction
patterns revealed that all the films are
amorphous. The saturation magnetization of
the Co67.23Tb30.52Ag2.25 film is about 310
emu/cm3; perpendicular remanence is about
255 emu/cm3, and the perpendicular coercivity
is about 3100 Oe at room temperature. The
saturation magnetization and perpendicular
coercivity decrease rapidly as temperature
increases from room temperature to 200 °C.
The compensation temperature Tcomp of this
film is about 225 °C. This film is a promising
candidate for near-field optical write and
magnetic flux detection recording media
applications.
Subjects
magnetron sputtering
CoTbAg film
amorphous thin films
magnetic properties
Publisher
臺北市：國立臺灣大學材料科學與工程學系暨研究所
Type
report
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