CoTbAg薄膜之研製及其應用於單層近場光學寫入磁通量讀取之記錄媒體的可行性探討

Abstract

此研究係研製單層CoTbAg 薄膜以應用於近場光學寫入與磁通量讀取的記錄媒體。採用直流磁控濺鍍，在玻璃基板及表 面自然氧化之Si 基板上鍍製Co68.48-XTb30.52AgX 合金薄膜，其中X= 0~25 at.%;並以射頻磁控濺鍍在薄膜上下各濺鍍 一層SiNx 保護層，避免其氧化。探討非磁性元素Ag 之含量對Co68.48-XTb30.52AgX 薄膜之微結構及磁性質的影響。X-ray 繞射及TEM 電子繞射結果顯示所有的薄膜均為非晶質。其中Co67.23Tb30.52Ag2.25 薄膜在室溫的Ms 值約為310 emu/cm3, Hc⊥值為3100Oe，當溫度由室溫上升至200 °C 時，其Ms 及Hc⊥值急速下降。此薄膜之補償溫度Tcomp 約為225 °C，具有應用於近場光學寫入與磁通量讀取的記錄媒體之潛力。

This work fabricates a single-layer CoTbAg film for near-field optical write and magnetic flux detection recording medium application. Co68.48-XTb30.52AgX films with X= 0~25 at.% are deposited on glass and naturally oxidized silicon wafer substrate by dc magnetron sputtering. The magnetic film is sandwiched between SiNx protective layers to prevent oxidization. The effects of non-magnetic element Ag content on the magnetic properties and microstructure of the film are investigated. X-ray diffraction and transmission electron microscope diffraction patterns revealed that all the films are amorphous. The saturation magnetization of the Co67.23Tb30.52Ag2.25 film is about 310 emu/cm3; perpendicular remanence is about 255 emu/cm3, and the perpendicular coercivity is about 3100 Oe at room temperature. The saturation magnetization and perpendicular coercivity decrease rapidly as temperature increases from room temperature to 200 °C. The compensation temperature Tcomp of this film is about 225 °C. This film is a promising candidate for near-field optical write and magnetic flux detection recording media applications.