https://scholars.lib.ntu.edu.tw/handle/123456789/75015
標題: | Rigorous electromagnetic simulation of mask magnification effects on the diffracted light for EUV binary mask | 作者: | Lin, Chun-Hung Chen, Hsuen-Li Ko, Fu-Hsiang |
關鍵字: | Extreme ultraviolet lithography; Mask magnification; Rigorous coupled-wave analysis | 公開日期: | 2007 | 期: | 84 | 起(迄)頁: | 711-715 | 來源出版物: | Microelectronic Engineering | 摘要: | Extreme ultraviolet (EUV) lithography is expected to be the main candidate in the semiconductor manufacturing starting at 32 nm. As the CD is getting smaller, the aspect ratio of the patterns on the EUV mask is becoming larger. The shadowing effect will become much more significant when keeping the same 4× mask magnification. In this work, mask magnification effects on the diffracted light were explored with rigorous coupled-wave analysis (RCWA) for the sub-32 nm node. The simulated binary mask consists of 70-nm TaBN absorber and 2.5-nm Ru capping layer. The dependences of the diffraction efficiencies on mask pitches were calculated. The impacts of the absorber shadowing were observed from the near field distribution on the EUV mask. The aerial images formed by the diffracted light from the 4× and 8× masks were further evaluated. © 2007 Elsevier B.V. All rights reserved. |
URI: | http://ntur.lib.ntu.edu.tw//handle/246246/95626 https://www.scopus.com/inward/record.uri?eid=2-s2.0-34247611453&doi=10.1016%2fj.mee.2007.01.010&partnerID=40&md5=d5fb1a06a00a53f9e725f50962005e3a |
ISSN: | 01679317 | SDG/關鍵字: | Aspect ratio; Computer simulation; Diffraction; Extreme ultraviolet lithography; Magnetoelectric effects; Mask magnification; Near field distribution; Rigorous coupled wave analysis; Semiconductor manufacturing; Masks |
顯示於: | 材料科學與工程學系 |
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