https://scholars.lib.ntu.edu.tw/handle/123456789/75788
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Banerjee, Writam | en |
dc.contributor.author | Yang, Jer-Ren et al. | en |
dc.creator | Banerjee, Writam; Maikap, Siddheswar; Lai, Chao-Sung; Chen, Yi-Yan; Tien, Ta-Chang; Lee, Heng-Yuan; Chen, Wei-Su; Chen, Frederick T.; Kao, Ming-Jer; Tsai, Ming-Jinn; Yang, Jer-Ren | - |
dc.date | 2012 | en |
dc.date.accessioned | 2012-10-24T11:18:11Z | - |
dc.date.accessioned | 2018-06-28T22:23:56Z | - |
dc.date.available | 2012-10-24T11:18:11Z | - |
dc.date.available | 2018-06-28T22:23:56Z | - |
dc.date.issued | 2012 | - |
dc.identifier.uri | http://ntur.lib.ntu.edu.tw//handle/246246/243604 | - |
dc.language | en | en |
dc.language.iso | en_US | - |
dc.relation | Nanoscale Research Letters, 7(1), 194 | en |
dc.relation.ispartof | Nanoscale Research Letters | - |
dc.title | Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dots | en |
dc.type | journal article | en |
dc.identifier.doi | 10.1186/1556-276X-7-194 | en |
dc.relation.pages | 194 | - |
dc.identifier.uri.fulltext | http://ntur.lib.ntu.edu.tw/bitstream/246246/243604/-1/46.pdf | - |
item.openairecristype | http://purl.org/coar/resource_type/c_6501 | - |
item.openairetype | journal article | - |
item.languageiso639-1 | en_US | - |
item.grantfulltext | open | - |
item.cerifentitytype | Publications | - |
item.fulltext | with fulltext | - |
crisitem.author.dept | Materials Science and Engineering | - |
crisitem.author.orcid | 0000-0001-7897-7039 | - |
crisitem.author.parentorg | College of Engineering | - |
顯示於: | 材料科學與工程學系 |
在 IR 系統中的文件,除了特別指名其著作權條款之外,均受到著作權保護,並且保留所有的權利。