dc.relation.reference | [1] P. J. Hargis, “The Gaseous Electronics Conference radio-frequency reference cell: A defined parallel–plate radio-frequency system for experimental and theoretical studies of plasma-processing discharges”, Rev. Sci. Instrum. Vol. 65, pp. 140-154, 1994.
[2] Godyak V A, “Langmuir probe diagnostic in RF plasma report,” E-23, 4ist Ann. GEC, 1988.
[3] 林志龍, 「電漿製程環境中雙極性靜電吸盤的量測與開發」,國立台灣大學應用力學研究所, 碩士論文,2005。
[4] K. H. Ke, “Diagnostic Pedestal Assembly for a Semiconductor Wafer Processing System,” USPTO 5,989,349 , 1999.
[5] B. Chapman, Glow discharge processes, John Wiley & Sons, New York, 1985.
[6] 張慶彥, 「具射頻補償之蘭牟爾探針電漿量測系統之研製與量測分析」,國立清華大學工程與系統科學系, 碩士論文,1998。
[7] L. Schott, Electric Probe in Plasma Diagnostic, AIP Press, New York, 1995.
[8] Francis F. Chen, Electric Probe in Plasma Diagnostic Techniques, Academic Press, New York, 1967.
[9] 王聖元, 「外置式線圈離子化物理氣相沉積系統之電漿特性量測」, 國立清華大學工程與系統科學系, 碩士論文, 2002。
[10] I. H. Hutchinson, Principle of Plasma Diagnostics, Second Edition, Cambridge University Press, 2002.
[11] Francis F. Chen, Introduction to Plasma Physics and Controlled Fusion, Second Edition, Plenum Press, New York and London, 1984.
[12] Shawming Ma, “Plasma Charging Damage Characterization of 200mm and 300mm Dielectric Etch Chambers Using Bias Voltage Diagnostic Cathodes,” 7th International Symposium on Plasma and Process Induced Damage, June 2002.
[13] J. K. Olthoff and R. J. Van Brunt, “Ion Kinetic-energy distribution in argon rf glow discharges,” J. Appl. Phys. 72(10), 1992.
[14] M. J. Buie, “ Characterization of Etch rate non-uniformity in a magnetically enhanced reactive ion etcher,” J. Vac. Sci. Technol. A 16(3), 1998.
[15]張家豪,「電漿源原理與應用之介紹」,物理雙月刊,28(2), 2006.
[16]I M EI-Fayoumi, “Hysteresis in the E- to H-mode transition in a planar coil, inductively coupled rf argon discharge,” J. Appl. Phys .Vo.31, pp. 3082-3094, 1998.
[17] J. K. Olthoff and R. J. Van Brunt, “Kinetic energy distribution of ions sampled from argon plasmas in a parallel plate, radio frequency reference cell, ” J. Appl. Phys., Vol.75 (1), pp.155-125, January 1994.
[18] E. C. Benck, A. Schwabedissen, A. Gates, and J. R. Roberts, “Investigations in the sheath region of a radio frequency biased inductively coupled plasma,” J. Vac. Sci. Technol. A 16(1), pp. 306-315, January 1998.
[19]M. A. Sobolewski, “Measuring the ion current in electrical discharges using radio frequency current and voltage measurements,” J. Appl. Phys. Vol.72 (10), pp. 1146-1148, March 1998.
[20]M. A. Sobolewski, “Ion energy distributions and sheath voltages in a radio frequency biased, inductively coupled, high density plasma reactor,” J. Appl. Phys. Vol.85 (8), pp. 3966-3975, April 1999.
[21]Y. Wang and J. K. Olthoff, “Ion energy distributions in inductively coupled radio frequency discharges in argon, oxygen, chlorine, and their mixtures,” J. Appl. Phys. Vol.85 (9), pp.6358-6365, May 1999.
[22]Y. Wang, and J. K. Olthoff, “Studies of ion bombardment in high density plasmas containing CF4,” J. Vac. Sci. Technol. A 17 (4), pp.1552-1555, July 1999.
[23] Y. Wang and J. K. Olthoff “Ion fluxes and energies in inductively coupled radio frequency discharges containing CHF3,” J. Appl. Phys. Vol.88 (10), pp. 5612-5617, November 2005.
[24] M. A. Sobolewski, “Measuring the ion current in high density plasmas using radio frequency current and voltage measurements,” J. Appl. Phys. Vol.90 (6), pp. 2660-2771, September 2001.
[25]J. H. Keller, “Inductive plasmas for plasma processing,” Plasma Sources Sci. Technol. Vol.5, pp. 166-172, 1996
[26]Z. Yu, and D. Shaw, “Large area radio frequency plasma for microelectronics processing,” J. Vac. Sci. Technol. A 13 (3), pp. 871-874, May 1995) | zh_TW |