|Title:||Gallium Nitride Induces Neuronal Differentiation Markers in Neural Stem/ Precursor Cells Derived from Rat Cerebral Cortex||Authors:||Chen, Chi-Ruei
|Keywords:||Neural stem/precursors cells (NSPCs);Gallium nitride (GaN);Neurons;Synapsin I;Glycogen synthase kinase-3 beta (GSK-3 beta)||Issue Date:||2009||Source:||Acta Biomaterialia||Start page/Pages:||2610-2617||Abstract:||
In the present study, gallium nitride (GaN) was used as a substrate to culture neural stem/precursor cells (NSPCs), isolated from embryonic rat cerebral cortex, to examine the effect of GaN on the behavior of NSPCs in the presence of basic fibroblast growth factor (bFGF) in serum-free medium . Morphological studies showed that neurospheres maintained their initial shape and formed many long and thick processes with the fasciculate feature on GaN. Immunocytochemical characterization showed that GaN could induce the differentiation of NSPCs into neurons and astrocytes. Compared to poly-D-lysine (PDL), the most common substrate used for culturing neurons, there was considerable expression of synapsin I for differentiated neurons on GaN, suggesting GaN could induce the differentiation of NSPCs towards the mature differentiated neurons. Western blot analysis showed that the suppression of glycogen synthase kinase-3 beta (GSK-3 beta) activity was one of the effects of GaN-promoted NSPC differentiation into neurons. Finally, compared to PDL, GaN could significantly improve cell survival to reduce cell death after long-term culture. These results suggest that GaN potentially has a combination of electric characteristics suitable for developing neuron and/ or NSPC chip systems.
|Appears in Collections:||醫學工程學研究所|
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