Chen, Horng-ShyangHorng-ShyangChenYeh, Dong-MingDong-MingYehLu, Chih-FengChih-FengLuHuang, Chi-FengChi-FengHuangLu, Yen-ChengYen-ChengLuChen, Cheng-YenCheng-YenChenHuang, Jian-JangJian-JangHuangCHIH-CHUNG YANG2009-03-112018-07-062009-03-112018-07-06200600036951http://ntur.lib.ntu.edu.tw//handle/246246/144119https://www.scopus.com/inward/record.uri?eid=2-s2.0-33748279270&doi=10.1063%2f1.2339034&partnerID=40&md5=850c0f2577be71042698fbc8053653beThe authors fabricate blue/green two-wavelength, InGaN/GaN quantum-well (QW), flip-chip micro-light-emitting diodes (μ-LEDs) of different mesa sizes by stacking QWs of different indium contents. It is found that the blue/green contrast ratio of such a μ-LED increases with the mesa size. The relatively stronger blue intensity in a device of a larger mesa area is due to its higher operation junction temperature such that hole migration can be enhanced through thermally exciting holes to escape from the QW (green emitting) closest to the p-type layer and to be captured by the neighboring QWs (blue emitting). The higher junction temperature in such a μ-LED of a larger mesa area is due to its smaller ratio of the sidewall surface area over the active volume, leading to the less effective sidewall heat radiation and light extraction. © 2006 American Institute of Physics.application/pdf74858 bytesapplication/pdfen-USHeat radiation; Light emission; Light emitting diodes; Semiconducting gallium compounds; Semiconducting indium gallium arsenide; Semiconductor quantum wells; Flip-chip micro-light-emitting diodes; InGaN/GaN quantum-well (QW); Light extraction; Mesa sizes; Flip chip devicesjournal article2-s2.0-33748279270http://ntur.lib.ntu.edu.tw/bitstream/246246/144119/1/06.pdf