Lin, Ching-FuhChing-FuhLinSu, Yi-ShinYi-ShinSuYu, Di-KuDi-KuYuCHAO-HSIN WUWu, Bing-RueyBing-RueyWu2018-09-102018-09-10200300036951http://www.scopus.com/inward/record.url?eid=2-s2.0-0037981644&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/301715https://www.scopus.com/inward/record.uri?eid=2-s2.0-0037981644&doi=10.1063%2f1.1577384&partnerID=40&md5=f5ac8fe8e5095ba287584139a308ea85A study was performed on laser diodes with nonidentical multiple quantum wells. It was found that the temperature-induced carrier redistribution caused negative characteristic temperature for a certain temperature range. The low energy quantum wells behaved like reservoirs to overcome the detrimental influence of temperature.application/pdfapplication/pdfEnergy gap; Semiconducting indium compounds; Semiconductor lasers; Carrier redistribution; Semiconductor quantum wellsjournal article10.1063/1.15773842-s2.0-0037981644