Atomic layer deposition of sub-10?nm high-K gate dielectrics on top-gated MoS 2 transistors without surface functionalization

Lin Y.-S.Cheng P.-H.Huang K.-W.HSIN-CHIH LINMIIN-JANG CHEN2019-11-272019-11-27201801694332https://www.scopus.com/inward/record.uri?eid=2-s2.0-85043256309&doi=10.1016%2fj.apsusc.2018.02.225&partnerID=40&md5=8399221e9d0d91c0fa48a44324b2e422https://scholars.lib.ntu.edu.tw/handle/123456789/432407Atomic layer deposition of sub-10?nm high-K gate dielectrics on top-gated MoS 2 transistors without surface functionalizationjournal article10.1016/j.apsusc.2018.02.2252-s2.0-85043256309