Novel GaAs Metal–Semiconductor Field-Effect Transistors with InGaP/GaAs Multiple Quantum Barrier Capping and Buffer Layers

National Taiwan University Dept Elect EngnLee, Ching-TingChing-TingLeeLee, Hsin-YingHsin-YingLeeLin, Hao-HsiungHao-HsiungLin2006-11-142018-07-062006-11-142018-07-062002-10https://www.scopus.com/inward/record.uri?eid=2-s2.0-0036819379&doi=10.1143%2fjjap.41.5937&partnerID=40&md5=c7e8054cf282efe2fb166d4d69d407e5We present a novel GaAs metal–semiconductor field-effect transistor (MESFET) with InGaP/GaAs multiple quantum barrier (MQB) capping and buffer layers. The MQB structure with (29; 6, 5, 7; 8, 8, 1; 6, 5, 7; 29) periodic stacks was designed to increase effective-potential-barrier height. We demonstrate that, by using the InGaP/GaAs MQB capping layer, the gate Schottky barrier performance and gate leakage current are improved.application/pdf182536 bytesapplication/pdfzh-TWGaAs MESFETs, InGaP/GaAs multiple quantum barrierSchottky barriersemiconductor device fabricationNovel GaAs Metal–Semiconductor Field-Effect Transistors with InGaP/GaAs Multiple Quantum Barrier Capping and Buffer Layersjournal article10.1143/jjap.41.59372-s2.0-0036819379http://ntur.lib.ntu.edu.tw/bitstream/246246/200611150121950/1/7760.pdf