High breakdown voltage schottky gating of doped Si/SiGe 2DEG systems enabled by suppression of phosphorus surface segregation

Huang, C.-T.C.-T.HuangLi, J.-Y.J.-Y.LiSturm, J.C.J.C.SturmJIUN-YUN LI2018-09-102018-09-102012http://www.scopus.com/inward/record.url?eid=2-s2.0-84864265333&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/372798High breakdown voltage schottky gating of doped Si/SiGe 2DEG systems enabled by suppression of phosphorus surface segregationconference paper10.1109/ISTDM.2012.6222514