Performance improvement using diluted KOH passivation on recessed-gate AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors grown on 8-inch silicon(111) substrates

Jiang Y.-HChang L.-CHsu K.-CTseng I.-CCHAO-HSIN WU2021-09-022021-09-022017https://www.scopus.com/inward/record.uri?eid=2-s2.0-85029503855&partnerID=40&md5=4cd54b03f10907a612039e19134ae9c8https://scholars.lib.ntu.edu.tw/handle/123456789/580581In this letter, an effective surface recovery treatment by diluted KOH passivation is demonstrated. With this treatment, an enhanced-mode (threshold voltage =0.61V), high on-state current (175 mA/mm at overdrive voltage = 2 V), low on resistance (9.29 Ω-mm), less hysteresis (from 0.8V to 0.6V) AlGaN/GaN MOSHEMT is achieved.Gallium nitride; Manufacture; Metals; MOS devices; Oxide semiconductors; Passivation; Semiconducting silicon; Semiconductor device manufacture; Semiconductor junctions; Substrates; Surface treatment; Threshold voltage; AlGaN/gaN; Enhanced-mode; Gate recess; MOS-HEMT; Surface recovery; High electron mobility transistorsPerformance improvement using diluted KOH passivation on recessed-gate AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors grown on 8-inch silicon(111) substratesconference paper2-s2.0-85029503855