2013-02-272024-05-16https://scholars.lib.ntu.edu.tw/handle/123456789/666790摘要：目前具有最高太陽能轉換效率的太陽電池為InGaP/InGaAs/InGaAsSbN的三接面太陽能電池。其中使用了低含氮化合物半導體InGaAsSbN所構成的接面。此接面與傳統的Ge接面相較，可以在維持整體光電流的條件下，提升電池的開路電壓；進而提升整體太陽電池的轉換效率。因此，本計畫擬開發低含氮化合物子電池的技術以提升國內太陽電池的技術水準。 本計畫將建立在先前已發展良好之GaAsSbN材料磊晶研製技術，以 GaAs為基板製作新穎式單接面太陽能電池，並配合核能所的磊晶與元件製作技術，負責低含氮化合物子電池的磊晶成長。我們預期成長與 GaAs 晶格匹配且室溫能隙達到1.0 eV 的 GaAsSbN 材料，並用以成長PIN太陽電池結構，在AM1.5G條件下子電池的效率預期應可達到5%。 <br> Abstract: InGaP/InGaAs/InGaAsSbN triple junction solar cell is with the highest conversion efficiency of >43%, reported to date. The high efficiency is owing to the InGaAsSbN dilute nitride sub-cell which is able to provide higher open-circuited voltage while maintain the same short-circuited current as compared with the traditional triple junction solar cells that with Ge sub-cell. This proposal aims at the development of dilute nitride growth technology for high efficiency multi-junction solar cells. Based on our previous developed GaAsSbN material growth techniques, we will study novel dilute nitride GaAsSbN solar cells. We expect that dilute nitride material lattice-matched to GaAs substrate with a room temperature energy gap as low as 1.0 eV can be obtained. On this ground, dilute nitride solar cells with a conversion efficiency of 5% at AM1.5G is also expected.低含氮化合物1eV 子電池dilute nitrideGaAsSbN1eV subcell