In situ atomic layer deposition and synchrotron-radiation photoemission study of Al<inf>2</inf>O<inf>3</inf> on pristine n-GaAs(0 0 1)-4 ? 6 surface

Chang, Y.H.Y.H.ChangHuang, M.L.M.L.HuangChang, P.P.ChangShen, J.Y.J.Y.ShenChen, B.R.B.R.ChenHsu, C.L.C.L.HsuPi, T.W.T.W.PiMINGHWEI HONGKwo, J.J.Kwo2019-12-272019-12-272011https://scholars.lib.ntu.edu.tw/handle/123456789/443359In situ atomic layer deposition and synchrotron-radiation photoemission study of Al<inf>2</inf>O<inf>3</inf> on pristine n-GaAs(0 0 1)-4 ? 6 surfaceconference paper10.1016/j.mee.2011.03.0642-s2.0-79958073781https://www.scopus.com/inward/record.uri?eid=2-s2.0-79958073781&doi=10.1016%2fj.mee.2011.03.064&partnerID=40&md5=405c7cb83013a0e22ce3abebf491c1a3