Extremely sharp phosphorus turn-off slope and effect of hydrogen on phosphorus surface segregation in epitaxially-grown relaxed Si0.7Ge0.3 by RTCVD

Li, J.-Y.J.-Y.LiHuang, C.-T.C.-T.HuangSturm, J.C.J.C.SturmJIUN-YUN LI2018-09-102018-09-102012http://www.scopus.com/inward/record.url?eid=2-s2.0-84864184998&partnerID=MN8TOARShttp://scholars.lib.ntu.edu.tw/handle/123456789/372800Extremely sharp phosphorus turn-off slope and effect of hydrogen on phosphorus surface segregation in epitaxially-grown relaxed Si0.7Ge0.3 by RTCVDconference paper10.1109/ISTDM.2012.6222436