余政靖2006-07-252018-06-282006-07-252018-06-282004http://ntur.lib.ntu.edu.tw//handle/246246/9389於本研究中,我們進行多重區段CMP 的研究。不同於傳統單一區段的結構,多重區段結構是將晶圓載具內部於半徑方向上分為三段,每段皆可施加不同壓力,藉此達到完全平坦的目標。我們使用台灣應用材料公司的三區段CMP 機台,於研磨平台上具有in situ 的感應器,可以得到晶圓上59 點的表面厚度量測值,即為程序中的受控變數,而操作變數則為三個區段所施加壓力。首先對此59x3 的程序進行多變數控制。根據實驗設計法,以三個壓力不同的數值排列進行測試,隨後以最小平方法迴歸出程序的穩態增益矩陣。再加上程序的動態來自氣體充滿該區段所需時間,最後可得一59x3 的程序轉移函數矩陣,於其中每一行都具有相同的一階動態。控制目標是利用三個操作變數來維持均一的表面分佈。我們利用SVD 來設計非方形的控制器,設計一對角的PI 控制器(3x3),此控制器的輸出(3x1)即在主要輸入(principal input)的方向上,再利用這些輸出轉換到系統的真實輸入(3x1),為實際的壓力值。之後配合實際ECP 製程所產生之晶圓各種起始表面分佈來進行模擬,結果都能維持在各自的可達成表現In this work, the control of a new type of chemical mechanical polishing (CMP), multi-zone CMP, is explored. Unlike the typical single zone configuration, the wafer carrier is divided into three zones in the radial position and different pressure can be applied to each zone. For the Applied Materials three-zone CMP, the copper thickness across the radial position is measured with an in-situ sensor. The measurement is converted to 59 data points along the radial position. In the process control notation, these are the controlled variables and the manipulated variables are the three pressures applied to each zone, and we focus on the multivariable control of this 59x3 process. First, a two-level factorial design is carried out on all three pressures followed by the least square regression to find the steady-state gain matrix. Incorporated with the gas holdup dynamics, we have a 59x3 process transfer function matrix with the same first order dynamics in each column. Second, the singular value decomposition (SVD) is used to design the non-square feedback controller. Next, a diagonal PI controller (3x3) is designed and the controller outputs in the principle input directions (3x1) are computed. Finally, these controller outputs are transformed to the true inputs (3 pressures) to the process. This SVD controller can be implemented using standard software with little difficulty. The proposed control system is test on incoming wafers with different surface profiles. Results show that achievable performance (least square results) can be maintained using the proposed SVD controller.application/pdf178919 bytesapplication/pdfzh-TW國立臺灣大學化學工程學系暨研究所化學機械研磨的模式化與控制(3/3)Modeling and Control of Chemical Mechanical Polishing(3/3)reporthttp://ntur.lib.ntu.edu.tw/bitstream/246246/9389/1/922214E002032.pdf